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We investigate background charge fluctuation in a GaAs quantum dot device by measuring 1/f noise in the single-electron tunneling current through the dot. The current noise is understood as fluctuations of the confinement potential and tunneling barriers. The estimated potential fluctuation increases almost linearly with temperature, which is consistent with a simple model of the 1/f noise. We find that the fluctuation increases very slightly when electrons are injected into excited states of the quantum dot.
We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range
We analyze the transport properties of a double quantum dot device with both dots coupled to perfect conducting leads and to a finite chain of N non-interacting sites connecting both of them. The inter-dot chain strongly influences the transport acro
The response of a single InGaAs quantum dot, embedded in a miniaturized charge-tunable device, to an applied GHz bandwidth electrical pulse is investigated via its optical response. Quantum dot response times of 1.0 pm 0.1 ns are characterized via se
We study phonon emission in a GaAs/AlGaAs double quantum dot by monitoring the tunneling of a single electron between the two dots. We prepare the system such that a known amount of energy is emitted in the transition process. The energy is converted
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definit