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Shubnikov-de Haas data is presented for a p-SiGe sample exhibiting strongly insulating behaviour at nu = 3/2. In addition to the fixed points defining a high field metal- insulator transition into this phase separate fixed points can also be identified for the nu = 3 --> 2 and 2 --> 1 Integer quantum Hall transitions. Another feature of the data, that the Hall resistivity approaches zero in the insulating phase, indicates it is not a re-entrant Hall insulator. The behaviour is explained in terms of the strong exchange interactions. At integer filling factors these cause the 0 uparrow and 1 downarrow Landau levels to cross and be well separated but at non-integer values of nu screening reduces exchange effects and causes the levels to stick together. It is suggested the insulating behaviour, and high field metal/insulator transition, is a consequence of the strong exchange interactions.
We report magnetotransport measurements of fractional quantum Hall states in an AlAs quantum well around Landau level filling factor nu = 3/2, demonstrating that the quasiparticles are composite Fermions (CFs) with a valley degree of freedom. By moni
When a gas of electrons is confined to two dimensions, application of a strong magnetic field may lead to startling phenomena such as emergence of electron pairing. According to a theory this manifests itself as appearance of the fractional quantum H
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulat
There is increasing experimental evidence for fractional quantum Hall effect at filling factor $ u=2+3/8$. Modeling it as a system of composite fermions, we study the problem of interacting composite fermions by a number of methods. In our variationa
We show that in dilute metallic p-SiGe heterostructures, magnetic field can cause multiple quantum Hall-insulator-quantum Hall transitions. The insulating states are observed between quantum Hall states with filling factors u=1 and 2 and, for the fi