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Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively () and positively (X+) charged excitons are measured as functions of quantum well width, free carrier density and in external magnetic fields up to 47 T. The binding energy of shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to 29 A. The binding energies of X+ are about 25% smaller than the binding energy in the same structures. The magnetic field behavior of and X+ binding energies differ qualitatively. With growing magnetic field strength, increases its binding energy by 35-150%, while for X+ it decreases by 25%. Zeeman spin splittings and oscillator strengths of excitons and trions are measured and discussed.
We present a detailed investigation of excitonic absorption in $Zn_{0.69}Cd_{0.31}Se/ZnSe$ quantum wells under the application of a perpendicular magnetic field. The large energy separation between heavy- and light-hole excitons allows us to clearly
Resonance dielectric response of excitons is studied for the high-quality GaAs/InGaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures with nominal
A new mechanism for exciton lasing in ZnSe/ZnCdSe quantum wells is proposed. Lasing, occurring below the lowest exciton line, may be associated with a BCS-like condensed (coherent) exciton state. This state is most stable at low temperatures for dens
The difficulty of describing excitons in semiconducting SWNTs analytically lies with the fact that excitons can neither be considered strictly 1D nor 2D objects. However, the situation changes in the case of metallic nanotubes where, by virtue of scr
Coherent optical spectroscopy such as four-wave mixing and photon echo generation deliver detailed information on the energy levels involved in optical transitions through the analysis of polarization of the coherent response. In semiconductors, it c