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We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer WSe2 potential for the application in the high-performance flexible and transparent electronics.
The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K valle
In monolayer transition metal dichalcogenides, quantum emitters are associated with localized strain that can be deterministically applied to create designer nano-arrays of single photon sources. Despite an overwhelming empirical correlation with loc
Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges (valleys) to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseud
Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can
The presence of two spin-split valleys in monolayer (1L) transition metal dichalcogenide (TMD) semiconductors supports versatile exciton species classified by their spin and valley quantum numbers. While the spin-0 intravalley exciton, known as the b