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We present a novel microscopic technique to access local transient optical constants and carrier motion in thin-film materials in three dimensions, with sub-10 nm spatial precision and sub-15 fs temporal resolution. Our experimental scheme is based on imaging a traditionally defocussed plane in an interferometrically enhanced femtosecond pump-probe microscope, combining the amplitude and phase contrast between the perturbed and unperturbed probe due to the local photoinduced complex refractive index change. We find that our experimental approach is well described by a simple optical model based on a radially averaged Gaussian photoexcitation approximation, which we benchmark using finite-difference time-domain calculations. Measurements on the organic semiconductor pentacene reveal an unexpected sub-1 ps out-of-plane motion of the correlated triplet-triplet exciton. Our approach is applicable to thin film materials in any pump-probe experiment, and holds promise for quantitative studies of three-dimensional transport in semiconductors, especially relevant to next-generation functional materials.
We report here an experimental setup to perform three-pulse pump-probe measurements over a wide wavelength and temperature range. By combining two pump pulses in the visible (650-900 nm) and mid-IR (5-20 $mu$m) range, with a broadband supercontinuum
Scattering-type scanning near-field optical microscopy (s-SNOM) is instrumental in exploring polaritonic behaviors of two-dimensional (2D) materials at the nanoscale. A sharp s-SNOM tip couples momenta into 2D materials through phase matching to exci
We investigate the valley related carrier dynamics in monolayer MoS2 using helicity resolved non-degenerate ultrafast pump-probe spectroscopy at the vicinity of the high-symmetry K point under the temperature down to 78 K. Monolayer MoS2 shows remark
We describe an ultrafast time resolved pump-probe spectroscopy setup aimed at studying the switching of nanophotonic structures. Both fs pump and probe pulses can be independently tuned over broad frequency range between 3850 and 21050 cm$^{-1}$. A b
Nanostructuring hard optical crystals has so far been exclusively feasible at their surface, as stress induced crack formation and propagation has rendered high precision volume processes ineffective. We show that the inner chemical etching reactivit