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5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the damping-like SOT efficiencies (${xi}_{DL}$) of Pt and Pt alloys are still limited to ${xi}_{DL}$<0.5. Here we present that with proper alloying elements, particularly 3d transition metals V and Cr, the strength of the high spin Hall conductivity of Pt (${sigma}_{SH}{sim}6.45{times}10^{5}({hbar}/2e){Omega}^{-1}{cdot} m^{-1}$) can be developed. Especially for the Cr-doped case, an extremely high ${xi}_{DL}{sim}0.9$ in a Pt$_{0.69}$Cr$_{0.31}$/Co device can be achieved with a moderate Pt$_{0.69}$Cr$_{0.31}$ resistivity of ${rho}_{xx}{sim}133 {mu}{Omega}{cdot}cm$. A low critical SOT-driven switching current density of $J_{c}{sim}3.16{times}10^{6} A{cdot}cm^{-2}$ is also demonstrated. The damping constant (${alpha}$) of Pt$_{0.69}$Cr$_{0.31}$/FM structure is also found to be reduced to 0.052 from the pure Pt/FM case of 0.078. The overall high ${sigma}_{SH}$, giant ${xi}_{DL}$, moderate ${rho}_{xx}$, and reduced ${alpha}$ of such Pt-Cr/FM heterostructure makes it promising for versatile extremely low power consumption SOT memory applications.
We experimentally investigate spin-orbit torque and spin pumping in Y$_3$Fe$_5$O$_{12}$(YIG)/Pt bilayers with ultrathin insertion layers at the interface. An insertion layer of Cu suppresses both spin-orbit torque and spin pumping, whereas an inserti
Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant spin Hall co
A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the spin-orbit fi
Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current. As the spin-orbit torque is inversely proportional to the
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we report spin-