ﻻ يوجد ملخص باللغة العربية
When magnetic skyrmions are moved via currents, they do not strictly travel along the path of the current, instead their motion also gains a transverse component. This so-called skyrmion Hall effect can be detrimental in potential skyrmion devices because it drives skyrmions towards the edge of their hosting material where they face potential annihilation. Here we experimentally modify a skyrmion model system - an atomic Pd/Fe bilayer on Ir(111) - by decorating the film edge with ferromagnetic Co/Fe patches. Employing spin-polarized scanning tunneling microscopy, we demonstrate that this ferromagnetic rim prevents skyrmion annihilation at the film edge and stabilizes skyrmions and target states in zero field. Furthermore, in an external magnetic field the Co/Fe rim can give rise to skyrmions pinned to the film edge. Spin dynamics simulations reveal how a combination of different attractive and repulsive skyrmion-edge interactions can induce such an edge-pinning effect for skyrmions.
Voltage manipulation of skyrmions is a promising path towards low-energy spintronic devices. Here, voltage effects on skyrmions in a GdOx/Gd/Co/Pt heterostructure are observed experimentally. The results show that the skyrmion density can be both enh
Magnetic skyrmions are chiral spin structures that have recently been observed at room temperature (RT) in multilayer thin films. Their topological stability should enable high scalability in confined geometries - a sought-after attribute for device
We numerically demonstrate an ultrafast method to create $textit{single}$ skyrmions in a $textit{collinear}$ ferromagnetic sample by applying a picosecond (effective) magnetic field pulse in the presence of Dzyaloshinskii-Moriya interaction. For smal
We conduct a combined experimental and theoretical study of the quantum-confined Stark effect in GaAs/AlGaAs quantum dots obtained with the local droplet etching method. In the experiment, we probe the permanent electric dipole and polarizability of
We report variation of the work function for single and bi-layer graphene devices measured by scanning Kelvin probe microscopy (SKPM). Using the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi