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تسجيل مستخدم جديدFloquet theory of photoinduced topological phase transitions in the organic salt $alpha$-(BEDT-TTF)$_2$I$_3$ irradiated with elliptically polarized light
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We theoretically investigate possible photoinduced topological phase transitions in the organic salt $alpha$-(BEDT-TTF)$_2$I$_3$, which possesses a pair of inclined massless Dirac-cone bands between the conduction and valence bands under uniaxial pressure. The Floquet analyses of a driven tight-binding model for this material reveal rich photoinduced variations of band structures, Chern numbers, and Hall conductivities under irradiation with elliptically polarized light. The obtained phase diagrams contain a variety of nonequilibrium steady phases, e.g., the Floquet Chern insulator, Floquet semimetal, and Floquet normal insulator phases. This work widens a scope of target materials for research on photoinduced topological phase transitions and contributes to development of research on the optical manipulations of electronic states in matters.
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Prolonged experimental attempts to find magnetic monopoles (i.e., elementary particles with an isolated magnetic charge in three dimensions) have not yet been successful despite intensive efforts made since Diracs proposal in 1931. Particle physicist
s have predicted the possible collision and pair annihilation of two magnetic charges with opposite signs. However, if such annihilation exists, its experimental observation would be difficult because its energy scale is predicted to be tremendously high ($sim$10$^{16}$ GeV). In the present work, we theoretically predict using the Floquet theory that a pair of slightly gapped Dirac-cone bands in a weakly-charge-ordered organic conductor $alpha$-(BEDT-TTF)$_2$I$_3$, which behave as magnetic charges with opposite signs in the momentum space, exhibit pair annihilation under irradiation with linearly polarized light. This photoinduced pair annihilation is accompanied by a non-topological phase transition to the Floquet normal insulator phase in contrast to the well-known circularly-polarized-light-induced topological phase transition to the Floquet Chern insulator phase. We discuss that $alpha$-(BEDT-TTF)$_2$I$_3$ has a peculiar band structure capable of realizing a suitable experimental condition (i.e., off-resonant condition) and a charge ordered state providing a required staggered site potential and thereby provides a rare example of materials that can be used to observe the predicted pair annihilation phenomenon. The feasibility of experimental observation is also discussed.
The emergence of photo-induced topological phases and their phase transitions are theoretically predicted in organic salt $alpha$-(BEDT-TTF)$_2$I$_3$, which possesses inclined Dirac cones in its band structure. By analyzing a photo-driven tight-bindi
ng model describing conduction electrons in the BEDT-TTF layer using the Floquet theorem, we demonstrate that irradiation with circularly polarized light opens a gap at the Dirac points, and the system eventually becomes a Chern insulator characterized by a quantized topological invariant. A rich phase diagram is obtained in plane of amplitude and frequency of light, which contains Chern insulator, semimetal, and normal insulator phases. We find that the photo-induced Hall conductivity provides a sensitive means to detect the predicted phase evolutions experimentally. This work contributes towards developing the optical manipulation of electronic states in matter through broadening the range of target materials that manifest photo-induced topological phase transitions.
We theoretically study the real-time dynamics of the photoinduced topological phase transition to a nonequilibrium Floquet Chern insulator in an organic conductor $alpha$-(BEDT-TTF)$_2$I$_3$, which was recently predicted using the Floquet theory. By
using a tight-binding model of $alpha$-(BEDT-TTF)$_2$I$_3$ that hosts a pair of tilted Dirac-cone bands at the Fermi level, we solve the time-dependent Schrodinger equation and obtained time evolutions of physical quantities for continuous-wave and pulse excitations with circularly polarized light. We demonstrate that, for the continuous-wave excitations, time profiles of the Chern number and the Hall conductivity show indications of the Floquet topological insulator. We argue that the Hall conductivity exhibits a slow oscillation with its frequency corresponding to a photoinduced direct gap determined by the Floquet band structure. With pulse excitations, transient excitation spectra are obtained, from which we infer the formation of Floquet bands and the gap opening at the Dirac point during the pulse irradiation. This dynamical gap formation is also manifested by the slow oscillation component of the Hall conductivity; that is, its frequency increases with time toward the pulse peak at which it nearly coincides with the photoinduced direct gap. The relevance of the results to experiments is also discussed.
We investigate the effect of strong electronic correlation on the massless Dirac fermion system, $alpha$-(BEDT-TTF)$_2$I$_3$, under pressure. In this organic salt, one can control the electronic correlation by changing pressure and access the quantum
critical point between the massless Dirac fermion phase and the charge ordering phase. We theoretically study the electronic structure of this system by applying the slave-rotor theory and find that the Fermi velocity decreases without creating a mass gap upon approaching the quantum critical point from the massless Dirac fermion phase. We show that the pressure-dependence of the Fermi velocity is in good quantitative agreement with the results of the experiment where the Fermi velocity is determined by the analysis of the Shubnikov-de Haas oscillations in the doped samples. Our result implies that the massless Dirac fermion system exhibits a quantum phase transition without creating a mass gap even in the presence of strong electronic correlations.
The two-dimensional organic conductor $alpha$-(BEDT-TTF)$_2$I$_3$ undergoes a metal-insulator transition at $T_{rm CO}=135$ K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties in order to e
xplore the field- and temperature-dependent dynamics. At a certain threshold field, the system switches from low-conducting to a high-conducting state, accompanied by a negative differential resistance. Our time-dependent infrared investigations indicate that close to $T_{rm CO}$ the strong electric field pushes the crystal into a metallic state with optical properties similar to the one for $T>T_{rm CO}$. Well into the insulating state, however, at $T=80$ K, the spectral response evidences a completely different electronically-induced high-conducting state. Applying a two-state model of hot electrons explains the observations by excitation of charge carriers with a high mobility. They resemble the Dirac-like charge-carriers with a linear dispersion of the electronic bands found in $alpha$-(BEDT-TTF)$_2$I$_3$ at high-pressure. Extensive numerical simulations quantitatively reproduce our experimental findings in all details.
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