اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSynergetic enhancement of power factor and suppression of lattice thermal conductivity via electronic structure modification and nanostructuring on Ni and B co-doped p-type Si-Ge alloy
251
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
For simultaneously achieving the high-power factor and low lattice thermal conductivity of Si-Ge based thermoelectric materials, we employed, in this study, constructively modifying the electronic structure near the chemical potential and nano-structuring by low temperature and high-pressure sintering on nano-crystalline powders. Nickel was doped to create the impurity states near the edge of the valence band for enhancing the power factor with boron for tuning the carrier concentration. The nanostructured samples with the nominal composition of Si0.65-xGe0.32Ni0.03Bx (x = 0.01, 0.02, 0.03, and 0.04) were synthesized by the mechanical alloying followed low-temperature and high-pressure sintering process. A large magnitude of Seebeck coefficient reaching 321 {mu}VK-1 together with a small electrical resistivity of 4.49 m{Omega}cm, leads to a large power factor of 2.3 Wm-1K-2 at 1000 K. With successfully reduced thermal conductivity down to 1.47 Wm-1K-1, a large value of ZT ~1.56 was obtained for Si0.65-xGe0.32Ni0.03B0.03 at 1000 K
قيم البحث
اقرأ أيضاً
The Heusler alloys Fe2NiZ (Z=Al, Ga, Si and Ge) have been synthesized and investigated focusing on the phase stability and the magnetic properties. The experimental and theoretical results reveal the covalent bonding originated from p-d hybridization
takes an important role in these alloys, which dominates the stability of ordered structure but leads to the decline of the band splitting. The electronic structure shows the IV group main group element (Si and Ge) provides stronger covalent effect than that of the III group element (Al and Ga). It has been found that the variations of the physical parameters, lattice constants, critical ordering temperature, magnetic moments and Curie temperature, precisely follow these covalent characters.
We study the low-temperature electrical and thermal conductivity of CoSi and Co$_{1-x}$M$_x$Si alloys (M = Fe, Ni; $x leq$ 0.06). Measurements show that the low-temperature electrical conductivity of Co$_{1-x}$Fe$_{x}$Si alloys decreases at $x > $ 0.
01 by an order of magnitude compared with that of pure CoSi. It was expected that both the lattice and electronic contributions to thermal conductivity would decrease in the alloys. However, our experimental results revealed that at temperatures below 20K the thermal conductivity of Fe- and Ni-containing alloys is several times larger than that of pure CoSi. We discuss possible mechanisms of the thermal conductivity enhancement. The most probable one is related to the dominant scattering of phonons by charge carriers. We propose a simple theoretical model that takes into account the complex semimetallic electronic structure of CoSi with nonequivalent valleys, and show that it explains well the increase of the lattice thermal conductivity with increasing disorder and the linear temperature dependence of the thermal conductivity in the Co$_{1-x}$Fe$_x$Si alloys below 20K.
The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at
200K due to the onset of conduction along the Si / SiO2 interface related to tunneling of electrons from the Fe3O4 into the accumulation layer of holes at the Si / SiO2 interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 {mu}V/K at 300K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K2m when the Fe3O4 layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe3O4 layer at 300 K, while the Fe3O4 / SiO2 / p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.
A study of magnetic hysteresis and Giant magnetoimpedance (GMI) in amorphous glass covered Co-Si-B and Co-Mn-Si-B wires is presented. The wires, about 10 microns in diameter, were obtained by glass-coated melt spinning technique. Samples with positiv
e magnetostriction (MS) have a rectangular bistable hysteresis loop. A smooth hysteresis loop is observed for wires with nearly zero MS. When MS is negative, almost no hysteresis is observed. The GMI was measured in the frequency range between 20 Hz and 30 MHz. The shapes of the impedance versus field curves are qualitatively similar to each other for both positive and zero MS samples. Impedance is maximum at zero field, and decreases sharply in the range 10-20 Oe. For the negative MS wires, when the driving current is small, the impedance is maximum at a finite external field. The position of the maximum approaches zero with increasing current. The contributions of the moment rotation and domain wall motion in the three cases are discussed.
The theoretical studies on the electronic and lattice properties of the series of non-centrosymmetric superconductors ThTSi, where T = Co, Ni, Ir, and Pt are presented. The electronic band structure and crystal parameters were optimized within the de
nsity functional theory. The spin-orbit coupling leads to the splitting of the electronic bands and Fermi surfaces, with the stronger effect observed for the compounds with the heavier atoms Ir and Pt. The possible mixing of the spin-singlet and spin-triplet pairing in the superconducting state is discussed. The phonon dispersion relations and phonon density of states were obtained using the direct method. The dispersion curves in ThCoSi and ThIrSi exhibit the low-energy modes along the S-N-S0 line with the tendency for softening and dynamic instability. Additionally, we calculate and analyse the contributions of phonon modes to lattice heat capacity.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
