ﻻ يوجد ملخص باللغة العربية
NADH is a key biomolecule involved in many biocatalytic processes as cofactor and its quantification can be correlated to specific enzymatic activity. Many efforts have been taken to obtain clean electrochemical signals related to NADH presence and lower its redox overpotential to avoid interferences. Suppression of background and secondary signals can be achieved by including a switchable electroactive surface, for instance, by using semiconductors able to harvest light energy and drive the excited electrons only when irradiated. Here we present the combination of a n-type Si semiconductor with fibers made of carbon nanotubes as electroactive surface for NADH quantification at low potentials only upon irradiation. The resulting photoelectrode responded linearly to NADH concentrations from 50 {mu} M to 1.6 mM with high sensitivity (54 $mu$ A cm$^{-2}$ mM${-1}$). This system may serve as a biosensing platform for detection and quantification of dehydrogenases activity.
We have characterized the conductivity of carbon nanotubes (CNT) fibers enriched in semiconducting species as a function of temperature and pulsed laser irradiation of 266 nm wavelength. While at high temperatures the response approaches an Arrhenius
Atomically thin transition metal dichalcogenides are highly promising for integrated optoelectronic and photonic systems due to their exciton-driven linear and nonlinear interaction with light. Integrating them into optical fibers yields novel opport
Solution-processed networks of semiconducting, single-walled carbon nanotubes (SWCNTs) have attracted considerable attention as materials for next-generation electronic devices and circuits. However, the impact of the SWCNT network composition on cha
The oxygen reduction (ORR) and oxygen evolution reactions (OER) in Zn-air batteries (ZABs) require highly efficient, cost-effective and stable electrocatalysts as replacements to traditionally high cost, inconsistently stable and low poison resistant
(Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real