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Atomistic defect engineering through the pulsed laser epitaxy of perovskite transition metal oxides offers facile control of their emergent opto-electromagnetic and energy properties. Among the various perovskite oxides, EuTiO3 exhibits a strong coupling between the lattice, electronic, and magnetic degrees of freedom. This coupling is highly susceptible to atomistic defects. In this study, we investigated the magnetic phase of EuTiO$_3$ epitaxial thin films via systematic defect engineering. A magnetic phase transition from an antiferromagnet to a ferromagnet was observed when the unit cell volume of EuTiO3 expanded due to the introduction of Eu-O vacancies. Optical spectroscopy and density functional theory calculations show that the change in the electronic structure as the ferromagnetic phase emerges can be attributed to the weakened Eu-Ti-Eu super-exchange interaction and the developed ferromagnetic Eu-O-Eu interaction. Facile defect engineering in EuTiO$_3$ thin films facilitates understanding and tailoring of their magnetic ground state.
The double perovskite Sr2CrReO6 is an interesting material for spintronics, showing ferrimagnetism up to 635 K with a predicted high spin polarization of about 86%. We fabricated Sr2CrReO6 epitaxial films by pulsed laser deposition on (001)-oriented
We argue that the centrosymmetric $C2/c$ symmetry in BiMnO$_3$ is spontaneously broken by antiferromagnetic (AFM) interactions existing in the system. The true symmetry is expected to be $Cc$, which is compatible with the noncollinear magnetic ground
We have investigated the magnetic damping of precessional spin dynamics in defect-controlled epitaxial grown Fe$_3$O$_4$(111)/Yttria-stabilized Zirconia (YSZ) nanoscale films by all-optical pump-probe measurements. The intrinsic damping constant of t
We report a giant resistance drop induced by dc electrical currents in La0.67Ca0.33MnO3 epitaxial thin films. Resistance of the patterned thin films decreases exponentially with increasing current and a maximum drop shows at the temperature of resist
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented,