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Single layer Pb on top of (111) surfaces of group IV semiconductors hosts charge density wave and superconductivity depending on the coverage and on the substrate. These systems are normally considered to be experimental realizations of single band Hubbard models and their properties are mostly investigated using lattice models with frozen structural degrees of freedom, although the reliability of this approximation is unclear. Here, we consider the case of Pb/Ge(111) at 1/3 coverage, for which surface X-ray diffraction and ARPES data are available. By performing first principles calculations, we demonstrate that the non-local exchange between Pb and the substrate drives the system into a $3times 3$ charge density wave. The electronic structure of this charge ordered phase is mainly determined by two effects: the magnitude of the Pb distortion and the large spin-orbit coupling. Finally, we show that the effect applies also to the $3times 3$ phase of Pb/Si(111) where the Pb-substrate exchange interaction increases the bandwidth by more than a factor 1.5 with respect to DFT+U, in better agreement with STS data. The delicate interplay between substrate, structural and electronic degrees of freedom invalidates the widespread interpretation available in literature considering these compounds as physical realizations of single band Hubbard models.
We investigate the 1/3 monolayer $alpha$-Pb/Si(111) surface by scanning tunneling spectroscopy (STS) and fully relativistic first-principles calculations. We study both the high-temperature $sqrt{3}timessqrt{3}$ and low-temperature $3times 3$ reconst
The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single
The electronic properties of thin metallic films deviate from the corresponding bulk ones when the film thickness is comparable with the wavelength of the electrons at the Fermi level due to quantum size effects (QSE). QSE are expected to affect the
We analyze the transformation from insulator to metal induced by thermal fluctuations within the Falicov-Kimball model. Using the Dynamic Mean Field Theory (DMFT) formalism on the Bethe lattice we find rigorously the temperature dependent Density of
Substrate engineering provides an opportunity to modulate the physical properties of quantum materials in thin film form. Here we report that TiSe$_2$ thin films grown on TiO$_2$ have unexpectedly large electron doping that suppresses the charge dens