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Slow light in topological valley photonic crystal structures offers new possibilities to enhance light-matter interaction. We report a topological cavity based on slow light topological edge mode for broadband Purcell enhancement. The topological edge modes with large group indices over 100 can be realized with a bearded interface between two topologically distinct valley photonic crystals, featuring the greatly enhanced Purcell factor because of the increased local density of states. In the slow light regime, the topological cavity supports much more cavity modes with higher quality factor than that in the fast light regime, which is both demonstrated theoretically and experimentally. We demonstrate the cavity enables the broadband Purcell enhancement together with substantial Purcell factor, benefiting from dense cavity modes with high quality factor in a wide spectral range. It has great benefit to the realization of high-efficiency quantum-dot-based single-photon sources and entangled-photon sources with less restriction on spectral match. Such topological cavity could serve as a significant building block toward the development of photonic integrated circuits with embedded quantum emitters.
We show that symmetric planar waveguides made of a film composed of a type II hyperbolic metamaterial, where the optical axis (OA) lays parallel to the waveguide interfaces, result in a series of topological transitions in the dispersion diagram as t
Topological lasers have been intensively investigated as a strong candidate for robust single-mode lasers. A typical topological laser employs a single-mode topological edge state, which appears deterministically in a designed topological bandgap and
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We use split-ring resonators to demonstrate topologically protected edge states in the Su-Schieffer-Heeger model experimentally, but in a slow-light wave with the group velocity down to $sim 0.1$ of light speed in free space. A meta-material formed b
Integration of solid state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride have emerged over th