اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدCharacterization of band offsets in Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ alloys with varying Al composition
91
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight-binding calculations and X-ray photoelectron spectroscopy (XPS) measurements. The observed weak variation in valence band offsets is consistent with the lack of any minigaps in the valence band, compared to the conduction band.
قيم البحث
اقرأ أيضاً
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase
of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth.
We report the structural, magnetic, and magnetocaloric properties of Co$_2$Cr$_{1-x}$Ti$_x$Al ($x=$ 0--0.5) Heusler alloys for spintronic and magnetic refrigerator applications. Room temperature X-ray diffraction and neutron diffraction patterns alon
g with Rietveld refinements confirm that the samples are of single phase and possess a cubic structure. Interestingly, magnetic susceptibly measurements indicate a second order phase transition from paramagnetic to ferromagnetic where the Curie temperature (T$_{rm C}$) of Co$_2$CrAl increases from 330~K to 445~K with Ti substitution. Neutron powder diffraction data of the $x=$ 0 sample across the magnetic phase transition taken in a large temperature range confirm the structural stability and exclude the possibility of antiferromagnetic ordering. The saturation magnetization of the $x=$ 0 sample is found to be 8000~emu/mol (1.45~$mu_{rm B}$/{it f.u.}) at 5~K, which is in good agreement with the value (1.35$pm$0.05~$mu_{rm B}$/{it f.u.}) obtained from the Rietveld analysis of the neutron powder diffraction pattern measured at temperature of 4~K. By analysing the temperature dependence of the neutron data of the $x=$ 0 sample, we find that the change in the intensity of the most intense Bragg peak (220) is consistent with the magnetization behavior with temperature. Furthermore, an enhancement of change in the magnetic entropy and relative cooling power values has been observed for the $x=$ 0.25 sample. Interestingly, the critical behavior analysis across the second order magnetic phase transition and extracted exponents ($betaapprox$ 0.496, $gammaapprox$ 1.348, and $deltaapprox$ 3.71 for the $x=$ 0.25 sample) suggest the presence of long-range ordering, which deviates towards 3D Heisenberg type interactions above T$_{rm C}$, consistent with the interaction range value $sigma$.
A five-level {Pp} model of the band structure for GaAs-type semiconductors is used to describe the spin $g^*$-factor and the cyclotron mass $m^*_c$ of conduction electrons in GaAs/Ga$_{1-x}$Al$_x$As quantum wells in an external magnetic field paralle
l to the growth direction. It is demonstrated that the previous theory of the $g^*$-factor in heterostructures is inadequate. Our approach is based on an iteration procedure of solving 14 coupled differential {Pp} equations. The applicability of the iteration procedure is verified. The final eigenenergy problem for the conduction subbands is reduced to two differential equations for the spin-up and spin-down states of consecutive Landau levels. It is shown that the bulk inversion asymmetry of III-V compounds is of importance for the spin $g^*$-factor. Our theory with no adjustable parameters gives an excellent description of experimental data on the electron spin $g^*$-factor in GaAs/Ga$_{0.67}$Al$_{0.33}$As rectangular quantum wells for different well widths between 3 and 12 nm. The same theory describes very well experimental cyclotron masses in GaAs/Ga$_{0.74}$Al$_{0.26}$As quantum wells for the well widths between 6 and 37 nm.
The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here, we present a heterostructure approach for epitaxial BSTS growth. A th
in n-type Bi$_2$Se$_3$ (BS) layer is used as an epitaxial and electrostatic seed which drastically improves the crystalline and electronic quality and reproducibility of the sample properties. In heterostructures of BS with p-type (Bi$_{1-x}$Sb$_x$)$_2$(Te$_{1-y}$Se$_y$)$_3$ (BSTS) we demonstrate intrinsic band bending effects to tune the electronic properties solely by adjusting the thickness of the respective layer. The analysis of weak anti-localization features in the magnetoconductance indicates a separation of top and bottom conduction layers with increasing BSTS thickness. By temperature- and gate-dependent transport measurements, we show that the thin BS seed layer can be completely depleted within the heterostructure and demonstrate electrostatic tuning of the bands via a back-gate throughout the whole sample thickness.
Ultra-wide-band-gap group-III nitrides are of interest for applications in deep-ultraviolet optoelectronics and power electronics. Such devices must be able to efficiently dissipate heat generated from their operation, making the thermal conductivity
of the constituent materials an important parameter for high-power applications. We have investigated the phonon-limited thermal conductivity of AlN, GaN, and Al$_x$Ga$_{1-x}$N using first-principles calculations, with a focus on the effects of compositional and isotopic disorder. Our Boltzmann-transport-equation calculations show that the maximum thermal conductivity for AlN (GaN) is 348 W m$^{-1}$ K$^{-1}$ (235 W m$^{-1}$ K$^{-1}$) for with pure $^{14}$N, and 292 W m$^{-1}$ K$^{-1}$ for GaN with pure $^{71}$Ga. Al$_x$Ga$_{1-x}$N alloys reach a minimum thermal conductivity at Al mole fractions of x = 0.60 to 0.71 over the 100-1000K temperature range. Our results provide understanding on the effects of isotope disorder on the thermal conductivity of AlN and GaN. We also present an analytical model for the evaluation of the thermal conductivity of Al$_x$Ga$_{1-x}$N alloys for arbitrary composition and temperature, which can be applied for the thermal design of AlGaN-based electronic and optoelectronic devices.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
