اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدRoadmap of spin-orbit torques
97
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.
قيم البحث
اقرأ أيضاً
Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can origina
te in both the bulk layers and at interfaces. Classifying spin-orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin-orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin-orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. Within the same model, we show the relationship between different interface transport parameters. For charges and spins flowing perpendicular to the interface, interfacial spin-orbit coupling both modifies the mixing conductance of magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin-orbit coupling gives rise to torques described by spin-orbit filtering, spin swapping and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer.
We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of
an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight on the parameters that determine the critical switching voltage.
Spin torque from spin current applied to a nanoscale region of a ferromagnet can act as negative magnetic damping and thereby excite self-oscillations of its magnetization. In contrast, spin torque uniformly applied to the magnetization of an extende
d ferromagnetic film does not generate self-oscillatory magnetic dynamics but leads to reduction of the saturation magnetization. Here we report studies of the effect of spin torque on a system of intermediate dimensionality - a ferromagnetic nanowire. We observe coherent self-oscillations of magnetization in a ferromagnetic nanowire serving as the active region of a spin torque oscillator driven by spin orbit torques. Our work demonstrates that magnetization self-oscillations can be excited in a one-dimensional magnetic system and that dimensions of the active region of spin torque oscillators can be extended beyond the nanometer length scale.
We study current-induced torques in WTe2/permalloy bilayers as a function of WTe2 thickness. We measure the torques using both second-harmonic Hall and spin-torque ferromagnetic resonance measurements for samples with WTe2 thicknesses that span from
16 nm down to a single monolayer. We confirm the existence of an out-of-plane antidamping torque, and show directly that the sign of this torque component is reversed across a monolayer step in the WTe2. The magnitude of the out-of-plane antidamping torque depends only weakly on WTe2 thickness, such that even a single-monolayer WTe2 device provides a strong torque that is comparable to much thicker samples. In contrast, the out-of-plane field-like torque has a significant dependence on the WTe2 thickness. We demonstrate that this field-like component originates predominantly from the Oersted field, thereby correcting a previous inference drawn by our group based on a more limited set of samples.
In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular
interest. Here, we calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism using first principles methods. We focus exclusively on the analogue to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the field-like torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
