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Electric-field noise due to surfaces disturbs the motion of nearby trapped ions, compromising the fidelity of gate operations that are the basis for quantum computing algorithms. We present a method that predicts the effect of dielectric materials on the ions motion. Such dielectrics are integral components of ion traps. Quantitative agreement is found between a model with no free parameters and measurements of a trapped ion in proximity to dielectric mirrors. We expect that this approach can be used to optimize the design of ion-trap-based quantum computers and network nodes.
Laser-cleaning of the electrodes in a planar micro-fabricated ion trap has been attempted using ns pulses from a tripled Nd:YAG laser at 355nm. The effect of the laser pulses at several energy density levels has been tested by measuring the heating r
Electric-field noise from the surfaces of ion-trap electrodes couples to the ions charge causing heating of the ions motional modes. This heating limits the fidelity of quantum gates implemented in quantum information processing experiments. The exac
We report on ground state laser cooling of single 111Cd+ ions confined in radio-frequency (Paul) traps. Heating rates of trapped ion motion are measured for two different trapping geometries and electrode materials, where no effort was made to shield
Trapped-ion quantum information processors store information in atomic ions maintained in position in free space via electric fields. Quantum logic is enacted via manipulation of the ions internal and shared motional quantum states using optical and
For the past two and a half decades, anomalous heating of trapped ions from nearby electrode surfaces has continued to demonstrate unexpected results. Caused by electric-field noise, this heating of the ions motional modes remains an obstacle for sca