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We reexamine the electronic structure of graphene on SiC substrate by angle-resolved photoemission spectroscopy. We directly observed multiply cloning of Dirac cone, in addition to ones previously attributed to reconstruction. The locations, relative distances and anisotropy of Dirac cone replicas fully agree with the moire pattern of graphene-SiC heterostructure. Our results provide a straightforward example of moire potential modulation in engineering electronic structure with Dirac fermions.
Artificial lattices provide a tunable platform to realize exotic quantum devices. A well-known example is artificial graphene (AG), in which electrons are confined in honeycomb lattices and behave as massless Dirac fermions. Recently, AG systems have
Graphene nanoribbons are widely regarded as promising building blocks for next-generation carbon-based devices. A critical issue to their prospective applications is whether and to what degree their electronic structure can be externally controlled.
We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that i
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical propert
To understand the band bending caused by metal contacts, we study the potential and charge density induced in graphene in response to contact with a metal strip. We find that the screening is weak by comparison with a normal metal as a consequence of