ﻻ يوجد ملخص باللغة العربية
The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential barriers, such as the flash memory. Here we adopt the model that was used to derive the Landauer formula at finite temperature, the nearly-free electron approximation to describe the electronic states in semi-infinite metal electrode and the Wentzel-Kramers-Brillouin (WKB) approximation to describe the transmission coefficient, and derive a tunneling current formula for metal/insulator heterojunctions under large bias and electric field. In contrast to the Fowler-Nordheim formula which is the limit at zero temperature, our formula is generalized to the finite temperature (with the thermal excitation of electrons in metal electrode considered) and the potential barriers beyond triangle ones, which may be used for the design of more complicated heterojunction devices based on the carrier tunneling.
In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have
The dependence of the Casimir force on material properties is important for both future applications and to gain further insight on its fundamental aspects. Here we derive a general theory of the Casimir force for low-conducting compounds, or poor me
A method for the study of the electronic transport in strongly coupled electron-phonon systems is formalized and applied to a model of polyyne chains biased through metallic Au leads. We derive a stationary non equilibrium polaronic theory in the gen
We study two-terminal transport through two-dimensional periodically driven systems in which all bulk Floquet eigenstates are localized by disorder. We focus on the Anomalous Floquet-Anderson Insulator (AFAI) phase, a topologically-nontrivial phase w
We observe and comprehend the dynamical Coulomb blockade suppression of the electrical conductance across an electronic quantum channel submitted to a temperature difference. A broadly tunable, spin-polarized Ga(Al)As quantum channel is connected on-