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In recent years the physics of two-dimensional semiconductors was revived by the discovery of the class of transition metal dichalcogenides. In these systems excitons dominate the optical response in the visible range and open many perspectives for nonlinear spectroscopy. To describe the coherence and polarization dynamics of excitons after ultrafast excitation in these systems, we employ the Bloch equation model of a two-level system extended by a local field describing the exciton-exciton interaction. We calculate four-wave mixing signals and analyze the dependence of the temporal and spectral signals as a function of the delay between the exciting pulses. Exact analytical results obtained for the case of ultrafast ($delta$-shaped) pulses are compared to numerical solutions obtained for finite pulse durations. If two pulses are used to generate the nonlinear signal, characteristic spectral line splittings are restricted to short delays. When considering a three-pulse excitation the line splittings, induced by the local field effect, persist for long delays. All of the found features are instructively explained within the Bloch vector picture and we show how the exciton occupation dynamics govern the different four-wave mixing signals.
Non-perturbative phenomena in four-wave mixing spectra of semiconductors are studied using the exact solution of a widely used phenomenological non-linear equation of motion of the exciton polarization. It is shown that Coulomb interaction, included
Coalescence overgrowth of pattern-grown GaN nanocolumns (NC) on c-plane sapphire substrate with metal organic chemical vapour deposition is demonstrated. The subsequent coalescence overgrowth opens a possibility for dislocation reduction due to the l
Based on a microscopic many-particle theory, we predict large optical gain in the probe and background-free four-wave mixing directions caused by excitonic instabilities in semiconductor quantum wells. For a single quantum well with radiative-decay l
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an approach for loc
We studied the semiconductor response with respect to high intensity resonant excitation on short time scale when the contribution of the Fermi statistics of the electrons and holes prevails. We studied both the single and double pulse excitations. F