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The critical thickness constitutes a vital parameter in heterostructure epitaxy engineering as it determines the limit where crystal coherency is lost. By finite element modeling of the total strain relaxation in finite size heterostructure nanowires, we show that the equilibrium configuration changes abruptly at the critical thickness from a fully elastically strained structure to a structure with a network of MDs. We show how the interdependent MD relaxation changes as a function of the lattice mismatch. These findings suggest that a collective formation of MDs takes place when the growing heterostructure layer exceeds the critical thickness.
The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to switching losses and lower breakdown voltages. The physical nature of
The experimental x-ray diffraction patterns of a Si$_{0.4}$Ge$_{0.6}$/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is shown that an inhomogeneous distribution of 60$^circ$ dislocations wit
Hydrogen arranges at dislocations in palladium to form nanoscale hydrides, changing the vibrational spectra. An ab initio hydrogen potential energy model versus Pd neighbor distances allows us to predict the vibrational excitations for H from absolut
Novel properties arising at interfaces between transition metal oxides, particularly the conductivity at the interface of LaAlO3 (LAO) and SrTiO3 (STO) band insulators, have generated new paradigms, challenges, and opportunities in condensed matter p
As circuitry approaches single nanometer length scales, it is important to predict the stability of metals at these scales. The behavior of metals at larger scales can be predicted based on the behavior of dislocations, but it is unclear if dislocati