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Electron hydrodynamics gives rise to surprising correlated behaviors in which electrons cooperate to quench dissipation and reduce the electric fields needed to sustain the flow. Such collective free flows are usually expected at the hydrodynamic lengthscales exceeding the electron-electron scattering mean free path $ell_{rm ee}$. Here we predict that in two-dimensional electron gases the collective free flows actually occur at the distances much smaller than $ell_{rm ee}$, in a nominally ballistic regime. The sub-$ell_{rm ee}$ free flows arise due to retroreflected holes originating from head-on electron electron collisions, which retrace the paths of impinging electrons and cancel out their potential. An exact solution, obtained in Corbino geometry, predicts potential strongly screened by the hole backflow. Screened potential is described by a fractional power law $r^{-5/3}$ over a wide range of $r$ values, from macroscales down to deep sub-$ell_{rm ee}$ scales, and a distinct non-Fermi-liquid temperature dependence.
In the context of describing electrons in solids as a fluid in the hydrodynamic regime, we consider a flow of electrons in a channel of finite width, i.e.~a Poiseuille flow. The electrons are accelerated by a constant electric field. We develop the a
Fermi gases in two dimensions display a surprising collective behavior originating from the head-on carrier collisions. The head-on processes dominate angular relaxation at not-too-high temperatures $Tll T_F$ owing to the interplay of Pauli blocking
Optical and electronic phenomena in solids arise from the behaviour of electrons and holes (unoccupied states in a filled electron sea). Electron-hole symmetry can often be invoked as a simplifying description, which states that electrons with energy
We consider ground state of electron-hole graphene bilayer composed of two independently doped graphene layers when a condensate of spatially separated electron-hole pairs is formed. In the weak coupling regime the pairing affects only conduction ban
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well