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We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.
We report Coulomb drag measurements on GaAs-AlGaAs electron-hole bilayers. The two layers are separated by a 10 or 25nm barrier. Below T$approx$1K we find two features that a Fermi-liquid picture cannot explain. First, the drag on the hole layer show
We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) t
The presence of pronounced electronic correlations in one-dimensional systems strongly enhances Coulomb coupling and is expected to result in distinctive features in the Coulomb drag between them that are absent in the drag between two-dimensional sy
We report drag measurements on dilute double layer two-dimensional hole systems in the regime of r_s=19~39. We observed a strong enhancement of the drag over the simple Boltzmann calculations of Coulomb interaction, and deviations from the T^2 depend
We study thermoelectric transport through a coherent molecular conductor connected to two electron and two phonon baths using the nonequilibrium Greens function method. We focus on the mutual drag between electron and phonon transport as a result of