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We report the observation of an intense anomalous peak at 1608 cm$^{-1}$ in the Raman spectrum of graphene associated to the presence of chromium nanoparticles in contact with graphene. Bombardment with an electron beam demonstrates that this peak is distinct from the well studied D$$ peak appearing as defects are created in graphene; the new peak is found non dispersive. We argue that the bonding of chromium atoms with carbon atoms softens the out-of-plane optical (ZO) phonon mode, in such a way that the frequency of its overtone decreases to $2omega_{rm ZO}simomega_{rm G}$, where $omega_{rm G}$=1585~cm$^{-1}$ is the frequency of the Raman-active E$_{rm 2g}$ mode. Thus, the observed new peak is attributed to the 2ZO mode which becomes Raman-active following a mechanism known as Fermi resonance. First-principles calculations on vibrational and anharmonic properties of the graphene/Cr interface support this scenario.
Massless Dirac fermions in graphene can acquire a mass through different kinds of sublattice-symmetry-breaking perturbations, and there is a growing need to determine this mass using a conventional method. We describe how the mass caused by a stagger
In Raman spectroscopy of graphite and graphene, the $D$ band at $sim 1355$cm$^{-1}$ is used as the indication of the dirtiness of a sample. However, our analysis suggests that the physics behind the $D$ band is closely related to a very clear idea fo
By analytically constructing the matrix elements of an electron-phonon interaction for the $D$ band in the Raman spectra of armchair graphene nanoribbons, we show that pseudospin and momentum conservation result in (i) a $D$ band consisting of two co
The dispersion of phonons and the electronic structure of graphene systems can be obtained experimentally from the double-resonance (DR) Raman features by varying the excitation laser energy. In a previous resonance Raman investigation of graphene, t
Intermediate frequency range (511 - 514 cm-1) Si phonons in Si-SiO2 nanocomposites are shown to have contribution from both core1 and surface/interface1 Si phonons, where, ratio of contribution of the two depends on the size of a Si nanocrystal. Furt