اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدQuasiparticle self-consistent $GW$ band structures and high-pressure phase transitions of LiGaO$_2$ and NaGaO$_2
144
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Quasi-particle self-consistent $GW$ calculations are presented for the band structures of LiGaO2 and NaGaO2 in the orthorhombic $Pna2_1$ tetrahedrally coordinated crystal structures. Symmetry labeling of the bands near the gap is carried out and effective mass tensors are extracted for the conduction band minimum and crystal field split valence band maxima at $Gamma$. The gap is found to be direct at $Gamma$ and is 5.81 eV in LiGaO2 and 5.46 eV in NaGaO2. Electron-phonon coupling zero-point normalization is estimated to lower these gaps by about 0.2 eV. Optical response functions are calculated within the independent particle long wavelength limit and show the expected anisotropy of the absorption onsets due to the crystal field splitting of the VBM. The results show that both materials are promising candidates as ultrawide gap semiconductors with wurtzite based tetrahedrally bonded crystal structures. Direct transitions from the lowest conduction band to higher bands, relevant to n-type doped material and transparent conduction applications are found to start only above 3.9 eV and are allowed for only one polarization, and several higher band transitions are forbidden by symmetry. Alternative crystal structures, such as $Rbar{3}m$ and a rocksalt type phase with tetragonally distorted $P4/mmm$ spacegroup, both with octahedral coordination of the cations are also investigated. They are found to have higher energy but about 20 % smaller volume per formula unit. The transition pressures to these phases are determined and for LiGaO2 found to be in good agreement with experimental studies. The $Rbar{3}m$phase also has a comparably high but slightly indirect band gap while the rocksalt type phase if found to have a considerably smaller gap of about 3.1 eV in LiGaO2 and 1.0 eV in NaGaO2.
قيم البحث
اقرأ أيضاً
We present quasiparticle (QP) energies from fully self-consistent $GW$ (sc$GW$) calculations for a set of prototypical semiconductors and insulators within the framework of the projector-augmented wave methodology. To obtain converged results, both f
inite basis-set corrections and $k$-point corrections are included, and a simple procedure is suggested to deal with the singularity of the Coulomb kernel in the long-wavelength limit, the so called head correction. It is shown that the inclusion of the head corrections in the sc$GW$ calculations is critical to obtain accurate QP energies with a reasonable $k$-point set. We first validate our implementation by presenting detailed results for the selected case of diamond, and then we discuss the converged QP energies, in particular the band gaps, for a set of gapped compounds and compare them to single-shot $G_0W_0$, QP self-consistent $GW$, and previously available sc$GW$ results as well as experimental results.
We present an approach to calculate the electronic structure for a range of materials using the quasiparticle self-consistent GW method with vertex corrections included in the screened Coulomb interaction W. This is achieved by solving the Bethe-Salp
eter equation for the polarization matrix at all k-points in the Brillouin zone. We refer to this method as QSGW^. We show that including ladder diagrams in W can greatly reduce the band gap overestimation of RPA-based QSGW. The resultant discrepency of the calculated band gap in this method is then attributed mostly to the fact that electron-phonon contributions to W are neglected; which would allow one to then obtain an estimate for the size of this effect. We present results for a range of systems from simple sp semiconductors to the strongly correlated systems NiO and CoO. Results for systems where the RPA-based QSGW band gap is larger than expected are investigated, and an estimate for the Frolich contribution to the gap is included in a few polar compounds where QSGW can overestimate the gap by as much as 2 eV. The improvement over QSGW for the dielectric constants is also presented
The electronic band structure of SrTiO$_3$ is investigated in the all-electron QS$GW$ approximation. Unlike previous pseudopotential based QS$GW$ or single-shot $G_0W_0$ calculations, the gap is found to be significantly overestimated compared to exp
eriment. After putting in a correction for the underestimate of the screening by the random phase approximation in terms of a 0.8$Sigma$ approach, the gap is still overestimated. The 0.8$Sigma$ approach is discussed and justified in terms of various recent literature results including electron-hole corrections. Adding a lattice polarization correction (LPC) in the ${bf q}rightarrow0$ limit for the screening of $W$, agreement with experiment is recovered. The LPC is alternatively estimated using a polaron model. We apply our approach to the cubic and tetragonal phases as well as a hypothetical layered post-perovskite structure and find that the LDA (local density approximation) to $GW$ gap correction is almost independent of structure.
We present spin wave dispersions in MnO, NiO, and $alpha$-MnAs based on the quasiparticle self-consistent $GW$ method (qsgw), which determines an optimum quasiparticle picture. For MnO and NiO, qsgw results are in rather good agreement with experimen
ts, in contrast to the LDA and LDA+U description. For $alpha$-MnAs, we find a collinear ferromagnetic ground state in qsgw, while this phase is unstable in the LDA.
Layered multi-ferroic materials exhibit a variety of functional properties that can be tuned by varying the temperature and pressure. As-synthesized CuInP$_2$S$_6$ is a layered material that displays ferrielectric behavior at room temperature. When s
ynthesized with Cu deficiencies, CuInP$_2$S$_6$ spontaneously phase segregates to form ferrielectric CuInP$_2$S$_6$ (CIPS) and paraelectric In$_{4/3}$P$_2$S$_6$ (IPS) domains in a two-dimensional self-assembled heterostructure. Here, we study the effect of hydrostatic pressure on the structure of Cu-deficient CuInP$_2$S$_6$ by Raman spectroscopy measurements up to 20 GPa. Detailed analysis of the frequencies, intensities, and linewidths of the Raman peaks reveals four discontinuities in the spectra around 2, 10, 13 and 17 GPa. At ~2 GPa, we observe a structural transition initiated by the diffusion of IPS domains, which culminates in a drastic reduction of the number of peaks around 10 GPa. We attribute this to a possible monoclinic-trigonal phase transition at 10 GPa. At higher pressures (~ 13 GPa), significant increases in peak intensities and sharpening of the Raman peaks suggest a bandgap-lowering and an isostructural electronic transition, with a possible onset of metallization at pressures above 17 GPa. When the pressure is released, the structure again phase-separates into two distinct chemical domains within the same single crystalline framework -- however, these domains are much smaller in size than the as-synthesized material resulting in suppression of ferroelectricity through nanoconfinement. Hydrostatic pressure can thus be used to tune the electronic and ferrielectric properties of Cu-deficient layered CuInP$_2$S$_6$.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
