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Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crystal structures with an {alpha}{beta}{alpha}{beta} stacking sequence, there have been long-standing questions regarding how the differences in adatom attachment kinetics at the steps separating the terraces affect the fractional coverage of {alpha} vs. {beta} termination during crystal growth. To demonstrate how surface X-ray scattering can help address these questions, we develop a general theory for the intensity distributions along crystal truncation rods (CTRs) for miscut surfaces with a combination of two terminations. We consider half-unit-cell-height steps, and variation of the coverages of the terraces above each step. Example calculations are presented for the GaN (0001) surface with various reconstructions. These show which CTR positions are most sensitive to the fractional coverage of the two terminations. We compare the CTR profiles for exactly oriented surfaces to those for vicinal surfaces having a small miscut angle, and investigate the circumstances under which the CTR profile for an exactly oriented surface is equal to the sum of the intensities of the corresponding family of CTRs for a miscut surface.
Crystal truncation rods calculated in the kinematical approximation are shown to quantitatively agree with the sum of the diffracted waves obtained in the two-beam dynamical calculations for different reflections along the rod. The choice and the num
Burton-Cabrera-Frank (BCF) theory has proven to be a versatile analysis to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diffusion and attachment at steps. For an important class of crystal surfac
Small-angle X-ray scattering from GaN nanowires grown on Si(111) is studied experimentally and modeled by means of Monte Carlo simulations. It is shown that the scattering intensity at large wave vectors does not follow Porods law $I(q)propto q^{-4}$
The exciton dynamics on flat (001) rubrene crystal surfaces have been compared with those under confined pyramidal geometry by time-resolved photoluminescence with micrometer spatial resolution. The luminescence spectra can be interpreted in terms of
A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process