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تسجيل مستخدم جديدSkyrmion Chirality Inversion in Ta/FeCoB/TaOx trilayers
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Skyrmions are nontrivial spiral spin textures considered as potential building blocks for ultrafast and power efficient spintronic memory and logic devices. Controlling their chirality would provide an additional degree of freedom and enable new functionalities in these devices. Achieving such control requires adjusting the interfacial Dzyaloshinskii-Moriya interaction (DMI). Thanks to Brillouin Light scattering measurements in Ta/FeCoB/TaOx trilayer, we have evidenced a DMI sign crossover when tuning TaOx oxidation and suspected another DMI sign crossover when tuning FeCoB thickness. Moreover, using polar magneto-optical Kerr effect microscopy, we demonstrate skyrmion chirality inversion through their opposite current induced motion direction either by changing FeCoB thickness or TaOx oxidation rate. This chirality inversion enables a more versatile manipulation of skyrmions, paving the way towards multidirectional devices.
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Skyrmions are chiral magnetic textures that have immense potential for applications in spintronic devices. However, their formation is quite challenging and necessitates a subtle balance of the magnetic interactions at play. Here, we study Ta/FeCoB/T
aOx trilayer using crossed double wedges i.e. thickness gradients of FeCoB and of top Ta, which is subsequently oxidized leading to an oxidation gradient. This enabled us to observe micron-sized skyrmions in the vicinity of different transition regions of the sample: from perpendicular magnetic anisotropy to paramagnetic phase and also from perpendicular to in-plane magnetic anisotropy. These observations can be explained by the isolated bubble model taking into account the different energy contributions at play namely anisotropy, exchange, Dzyaloshinskii-Moriya, dipolar and Zeeman. We also qualitatively compare the current-induced motion of skyrmions obtained in different transition regions. Our study not only provides an effective means to form skyrmions by tuning the interfacial magnetic properties but also highlights the differences pertaining to the skyrmions observed in different transition zones, which is extremely crucial for any envisaged application.
Chirality, an intrinsic handedness, is one of the most intriguing fundamental phenomena in nature. Materials composed of chiral molecules find broad applications in areas ranging from nonlinear optics and spintronics to biology and pharmaceuticals. H
owever, chirality is usually an invariable inherent property of a given material that cannot be easily changed at will. Here, we demonstrate that ferroelectric nanodots support skyrmions the chirality of which can be controlled and switched. We devise protocols for realizing control and efficient manipulations of the different types of skyrmions. Our findings open the route for controlled chirality with potential applications in ferroelectric-based information technologies.
The magnetic proximity effect in top and bottom Pt layers induced by Co in Ta/Pt/Co/Pt multilayers has been studied by interface sensitive, element specific x-ray resonant magnetic reflectivity. The asymmetry ratio for circularly polarized x-rays of
left and right helicity has been measured at the Pt $L_3$ absorption edge (11567 eV) with an in-plane magnetic field ($pm158$ mT) to verify its magnetic origin. The proximity-induced magnetic moment in the bottom Pt layer decreases with the thickness of the Ta buffer layer. Grazing incidence x-ray diffraction has been carried out to show that the Ta buffer layer induces the growth of Pt(011) rather than Pt(111) which in turn reduces the induced moment. A detailed density functional theory study shows that an adjacent Co layer induces more magnetic moment in Pt(111) than in Pt(011). The manipulation of the magnetism in Pt by the insertion of a Ta buffer layer provides a new way of controlling the magnetic proximity effect which is of huge importance in spin-transport experiments across similar kind of interfaces.
Magnetic skyrmions are promising for building next-generation magnetic memories and spintronic devices due to their stability, small size and the extremely low currents needed to move them. In particular, skyrmion-based racetrack memory is attractive
for information technology, where skyrmions are used to store information as data bits instead of traditional domain walls. Here we numerically demonstrate the impacts of skyrmion-skyrmion and skyrmion-edge repulsions on the feasibility of skyrmion-based racetrack memory. The reliable and practicable spacing between consecutive skyrmionic bits on the racetrack as well as the ability to adjust it are investigated. Clogging of skyrmionic bits is found at the end of the racetrack, leading to the reduction of skyrmion size. Further, we demonstrate an effective and simple method to avoid the clogging of skyrmionic bits, which ensures the elimination of skyrmionic bits beyond the reading element. Our results give guidance for the design and development of future skyrmion-based racetrack memory.
Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic propert
ies like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate 130% variation of DMI with electric field in Ta/FeCoB/TaOx trilayers through Brillouin Light Spectroscopy (BLS). Using polar- Magneto-Optical-Kerr-Effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field, with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion based memory or logic devices.
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