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Recent interest in topological nature in condensed matter physics has revealed the essential role of Berry curvature in anomalous Hall effect (AHE). However, since large Hall response originating from Berry curvature has been reported in quite limited materials, the detailed mechanism remains unclear at present. Here, we report the discovery of a large AHE triggered by a pressure-induced magnetic phase transition in elemental $alpha$-Mn. The AHE is absent in the non-collinear antiferromagnetic phase at ambient pressure, whereas a large AHE is observed in the weak ferromagnetic phase under high pressure despite the small averaged moment of $sim 0.02 mu_B$/Mn. Our results indicate that the emergence of the AHE in $alpha$-Mn is governed by the symmetry of the underlying magnetic structure, providing a direct evidence of a switch between a zero and non-zero contribution of the Berry curvature across the phase boundary. $alpha$-Mn can be an elemental and tunable platform to reveal the role of Berry curvature in AHE.
Electrical resistivity and ac-susceptibility measurements under high pressure were carried out in high-quality single crystals of $alpha$-Mn. The pressure-temperature phase diagram consists of an antiferromagnetic ordered phase (0<$P$<1.4 GPa, $T<T_{
We report magnetic and electrical properties for single crystals of NdMn$_6$Sn$_6$ and SmMn$_6$Sn$_6$. They crystallize into a structure which has distorted, Mn-based kagome lattices, compared to the pristine kagome lattices in heavy-rare-earth-beari
We report on the experimental observation of an anomalous Hall effect (AHE) in highly oriented pyrolytic graphite samples. The overall data indicate that the AHE in graphite can be self-consistently understood within the frameworks of the magnetic-field-driven excitonic pairing models.
We investigated the electronic structure of layered Mn oxide Bi3Mn4O12(NO3) with a Mn honeycomb lattice by x-ray absorption spectroscopy. The valence of Mn was determined to be 4+ with a small charge-transfer energy. We estimated the values of supere
Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the most popul