اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدStrain Tunable Semimetal-Topological-Insulator Transition in Monolayer 1T-WTe2
93
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
A quantum spin hall insulator(QSHI) is manifested by its conducting edge channels that originate from the nontrivial topology of the insulating bulk states. Monolayer 1T-WTe2 exhibits this quantized edge conductance in transport measurements, but because of its semimetallic nature, the coherence length is restricted to around 100 nm. To overcome this restriction, we propose a strain engineering technique to tune the electronic structure, where either a compressive strain along a axis or a tensile strain along b axis can drive 1T-WTe2 into an full gap insulating phase. A combined study of molecular beam epitaxy and in-situ scanning tunneling microscopy/spectroscopy then confirmed such a phase transition. Meanwhile, the topological edge states were found to be very robust in the presence of strain.
قيم البحث
اقرأ أيضاً
Quantum spin Hall (QSH) materials are two-dimensional systems exhibiting insulating bulk and helical edge states simultaneously. A QSH insulator processes topologically non-trivial edge states protected by time-reversal symmetry, so that electrons ca
n propagate unscattered. Realization of such topological phases enables promising applications in spintronics, dissipationless transport and quantum computations. Presently, realization of such QSH-based devices are limited to complicated heterostructures. Monolayer 1T-WTe2 was predicted to be semimetallic QSH materials, though with a negative band gap. The quasi-particle spectrum obtained using hybrid functional approach shows directly that the quantum spin Hall gap is positive for monolayer 1T-WTe2. Optical measurement shows a systematic increase in the interband relaxation time with decreasing number of layers, whereas transport measurement reveals Schottcky barrier in ultrathin samples, which is absent for thicker samples. These three independent pieces of evidence indicate that monolayer 1T-WTe2 is likely a truly 2-dimensional quantum spin Hall insulator.
Monolayer WTe2 attracts rapidly growing interests for its large-gap quantum spin Hall effect,which enables promising apllications in flexible logic devices. Due to one-dimensional W-W chains,1T-WTe2 exhibits unique anisotropic structure and promising
properties, which can be modified by simply applying strains. Based on the first-principles simulations, we show that phonon branch undergoes soft down to negative frequency at special q points under different critical strains, i.e., epsilon_a = 11.55 percent along a-axis (with W-W chains) direction, epsilon_b = 7.0 percent along b-axis direction and epsilon_ab = 8.44 percent along biaxial direction. Before each critical strain, the Raman-shift of A1_g, A3_g, and A4_g modes, corresponding to the main peaks in Raman spectra of 1T-WTe2 , shows anisotropic response to uniaxial strain but most sensitive to biaxial strain. Interestingly, we find that the frequency shift of A3_g mode show parabolic characters of strained 1T-WTe2, then we split it into two parts and it shows a Raman-shift transition at about 5 percent strains. While for the A1_g and A4_g modes,the frequencies change linearly. Through careful structure and vibration analysis, we try to explain these Raman irregularity in strained 1T-WTe2.
The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predict
ed for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we reveal an unexpected mechanism of the transition by high-resolution angle-resolved photoelectron spectroscopy combined with theoretical calculations. Anomalous evolution and degeneracy of quantized energy levels indicate that increased Coulomb repulsion from the surface states deforms a quantum confinement potential with decreasing thickness. The potential deformation drastically modulates spatial distributions of quantized wave functions, which leads to acceleration of the transition even beyond the original QSE picture. This discovery establishes a complete picture of the long-discussed problem in bismuth and highlights the new class of size effects dominating nanoscale transport in systems with metallic surface states.
Recent experiments have tuned the monolayer 1T-WTe2 to be superconducting by electrostatic gating. Here, we theoretically study the phonon-mediated superconductivity in monolayer 1T-WTe2 via charge doping. We reveal that the emergence of soft-mode ph
onons with specific momentum is crucial to give rise to the superconductivity in electron-doping regime, whereas no such soft-mode phonons and no superconductivity emerge in hole-doping regime. We also find a superconducting dome, which can be attributed to the change of Fermi surface nesting condition as electron doping. By taking into account the experimentally established strong anisotropy of temperature-dependent upper critical field H_{c2} between the in-plane and out-of-plane directions, we show that the superconducting state probably has the unconventional equal-spin-triplet pairing in A_{u} channel of C_{2h} point group. Our studies provide a promising understanding to the doping dependent superconductivity and strong anisotropy of H_{c2} in monolayer 1T-WTe2.
Three dimensional materials with strong spin-orbit coupling and magnetic interactions represent an opportunity to realize a variety of rare and potentially useful topological phases. In this work, we use first principles calculations to show that the
recently synthesized material Bi2MnSe4 displays a combination of band inversion and magnetic interactions, leading to several topological phases. Bi2PbSe4, also studied, also displays band inversion and is a topological insulator. In bulk form, the ferromagnetic phase of Bi2MnSe4 is either a nodal line or Weyl semimetal, depending on the direction of the spins. When the spins are arranged in a layered antiferromagnetic configuration, the combination of time reversal plus a partial translation is a new symmetry, and the material instead becomes an antiferromagnetic topological insulator. However, the intrinsic TRS breaking at the surface of Bi2MnSe4 removes the typical Dirac cone feature, allowing the observation of the half-integer quantum anomalous Hall effect (AHC). Furthermore, we show that in thin film form, for some thicknesses, Bi2MnSe4 becomes a Chern insulator with a band gap of up to 58 meV. This combination of properties in a stoichiometric magnetic material makes Bi2MnSe4 an excellent candidate for displaying robust topological behavior.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
