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تسجيل مستخدم جديدThe electric pulses induced multi-resistance states in the hysteresis temperature range of 1T-TaS2 and 1T-TaS1.6Se0.4
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The electric pulse-induced responses of 1T-TaS2 and 1T-TaS1.6Se0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multiple steps of the resistance are excited by electric pulses at a fixed temperature forming multi metastable like states. We propose that the response of the system corresponds to the rearrangements of the textures of CCDW domains and the multi-resistance states or the nonvolatile resistance properties excited simply by electric pulses have profound significance for the exploration of solid-state devices.
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ttice has long been noticed experimentally, but a transparent theoretical understanding remains elusive. We show that without CDW, the primary feature of the $1times1$ bands can be fitted by a simple trigonometric function, and physically understood by choosing a rotated $tilde{t}_{2g}$ basis with the principle axes aligning to the tilted TaS$_6$ octahedron. Using this basis, we trace the band evolution in the $sqrt{13}timessqrt{13}$ superlattice by progressively including different CDW effects. We point out that CDW strongly rehybridizes the three $tilde{t}_{2g}$ orbitals, which leads to the formation of a well-localized molecular orbital and spawns the flat band.
Transport studies of atomically thin 1T-TaS2 have demonstrated the presence of intermediate resistance states across the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition, which can be further switched electrically. Wh
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