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تسجيل مستخدم جديدWafer-scale low-loss lithium niobate photonic integrated circuits
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Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
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Integrated lithium niobate (LN) photonic circuits have recently emerged as a promising candidate for advanced photonic functions such as high-speed modulation, nonlinear frequency conversion and frequency comb generation. For practical applications,
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