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تسجيل مستخدم جديدIntrinsic bulk quantum oscillations in a bulk unconventional insulator SmB$_6$
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The finding of bulk quantum oscillations in the bulk Kondo insulator SmB$_6$, which has been proposed to be a correlated topological insulator, proved a considerable surprise. The subsequent measurement of bulk quantum oscillations in other correlated insulators including YbB$_{12}$ have lent support to our discovery of a class of unconventional insulators that are host to bulk quantum oscillations, of which SmB$_6$ was the first example. Here we perform a series of experiments to examine evidence for the intrinsic character of bulk quantum oscillations in floating zone-grown single crystals of SmB$_6$ that have been the subject of our quantum oscillation studies thus far. We present results of experiments including chemical composition analysis, magnetisation, thermal conductivity, electrical transport, and heat capacity on floating zone-grown single crystals of SmB$_6$, and a series of quantum oscillation experiments as a function of magnetic field, temperature, and magnetic field-orientation on single crystals of floating-zone grown SmB$_6$, LaB$_6$, and elemental Aluminium. Results of these experimental studies establish the intrinsic origin of quantum oscillations from the bulk of pristine floating zone-grown single crystals of SmB$_6$. The origin of the underlying bulk Fermi surface that bears close similarity with the unhybridised Fermi surface in metallic hexaborides despite the bulk insulating character of SmB$_6$ is thus at the heart of a theoretical mystery.
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Recent quantum oscillation experiments on SmB$_6$ pose a paradox, for while the angular dependence of the oscillation frequencies suggest a 3D bulk Fermi surface, SmB$_6$ remains robustly insulating to very high magnetic fields. Moreover, a sudden lo
w temperature upturn in the amplitude of the oscillations raises the possibility of quantum criticality. Here we discuss recently proposed mechanisms for this effect, contrasting bulk and surface scenarios. We argue that topological surface states permit us to reconcile the various data with bulk transport and spectroscopy measurements, interpreting the low temperature upturn in the quantum oscillation amplitudes as a result of surface Kondo breakdown and the high frequency oscillations as large topologically protected orbits around the X point. We discuss various predictions that can be used to test this theory.
Samarium hexaboride (SmB$_6$), a well-known Kondo insulator in which the insulating bulk arises from strong electron correlations, has recently attracted great attention owing to increasing evidence for its topological nature, thereby harboring prote
cted surface states. However, corroborative spectroscopic evidence is still lacking, unlike in the weakly correlated counterparts, including Bi$_2$Se$_3$. Here we report results from planar tunneling that unveil the detailed spectroscopic properties of SmB$_6$. The tunneling conductance obtained on the (001) and (011) single crystal surfaces reveal linear density of states as expected for two and one Dirac cone(s), respectively. Quite remarkably, it is found that these topological states are not protected completely within the bulk hybridization gap. A phenomenological model of the tunneling process invoking interaction of the surface states with bulk excitations (spin excitons), as predicted by a recent theory, provides a consistent explanation for all of the observed features. Our spectroscopic study supports and explains the proposed picture of the incompletely protected surface states in this topological Kondo insulator SmB$_6$.
We used the inverted resistance method to extend the bulk resistivity of SmB$_{6}$ to a regime where the surface conduction overwhelms the bulk. Remarkably, the bulk resistivity shows an intrinsic thermally activated behavior that changes ten orders
of magnitude, suggesting that it is an ideal insulator that is immune to disorder. Non-stoichiometrically-grown SmB$_{6}$ samples also show an almost identical thermally activated behavior. At low temperatures, however, these samples show a mysterious high bulk resistivity plateau, which may arise from extended defect conduction in a 3D TI.
We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations
in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB$_6$.
The Kondo insulator SmB$_6$ has long been known to display anomalous transport behavior at low temperatures, T$<5$ K. In this temperatures range, a plateau is observed in the dc resistivity, contrary to the exponential divergence expected for a gappe
d system. Recent theoretical calculations suggest that SmB$_6$ may be the first topological Kondo insulator (TKI) and propose that the residual conductivity is due to topological surface states which reside within the Kondo gap. Since the TKI prediction many experiments have claimed to observe high mobility surface states within a perfectly insulating hybridization gap. Here, we investigate the low energy optical conductivity within the hybridization gap of single crystals of SmB$_6$ via time domain terahertz spectroscopy. Samples grown by both optical floating zone and aluminum flux methods are investigated to probe for differences originating from sample growth techniques. We find that both samples display significant 3D bulk conduction originating within the Kondo gap. Although SmB$_6$ may be a bulk dc insulator, it shows significant bulk ac conduction that is many orders of magnitude larger than any known impurity band conduction. The nature of these in-gap states and their coupling with the low energy spin excitons of SmB$_6$ is discussed. Additionally, the well defined conduction path geometry of our optical experiments allows us to show that any surface states, which lie below our detection threshold if present, must have a sheet resistance of R$/square ge$ 1000 $Omega$.
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