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We investigate hole spin relaxation in the single- and multi-hole regime in a 2x2 germanium quantum dot array. We use radiofrequency (rf) charge sensing and observe Pauli Spin-Blockade (PSB) for every second interdot transition up to the (1,5)-(0,6) anticrossing, consistent with a standard Fock-Darwin spectrum. We find spin relaxation times $T_1$ as high as 32 ms for a quantum dot with single-hole occupation and 1.2 ms for a quantum dot occupied by five-holes, setting benchmarks for spin relaxation times for hole quantum dots. Furthermore, we investigate the qubit addressability and sensitivity to electric fields by measuring the resonance frequency dependence of each qubit on gate voltages. We are able to tune the resonance frequency over a large range for both the single and multi-hole qubit. Simultaneously, we find that the resonance frequencies are only weakly dependent on neighbouring gates, and in particular the five-hole qubit resonance frequency is more than twenty times as sensitive to its corresponding plunger gate. The excellent individual qubit tunability and long spin relaxation times make holes in germanium promising for addressable and high-fidelity spin qubits in dense two-dimensional quantum dot arrays for large-scale quantum information.
We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the doubl
We present a numerical study of spin relaxation in a semiclassical electron ensemble in a large ballistic quantum dot. The dot is defined in a GaAs/AlGaAs heterojunction system with a two-dimensional electron gas, and relaxation occurs due to Dressel
We estimate the triplet-singlet relaxation rate due to spin-orbit coupling assisted by phonon emission in weakly-confined quantum dots. Our results for two and four electrons show that the different triplet-singlet relaxation trends observed in recen
The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative analytical approac
A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage