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Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices

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 نشر من قبل Yoshio Kamiya
 تاريخ النشر 2020
  مجال البحث فيزياء
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We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensors responses for neutrons. Detection efficiency is measured to be around $1.5$% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 pm 0.2 ~mu$m in terms of a standard deviation of the line spread function.

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