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تسجيل مستخدم جديدTID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices
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We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.
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We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID (total ionizin
g dose) damage where holes trapped in oxide layers affect the operation of nearby transistors. We have introduced a second SOI layer - SOI2 beneath the BOX (Buried OXide) layer - in order to compensate for the TID effect by applying a negative voltage to this electrode to cancel the effect caused by accumulated positive holes. In this paper, the TID effects caused by Co gamma-ray irradiation are presented based on the transistor characteristics measurements. The irradiation was carried out in various biasing conditions to investigate hole accumulation dependence on the potential configurations. We also compare the data with samples irradiated with X-ray. Since we observed a fair agreement between the two irradiation datasets, the TID effects have been investigated in a wide dose range from 100~Gy to 2~MGy.
We are developing monolithic pixel sensors based on a 0.2 $mu$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard radiation envir
onments in HEP experiments. To compensate for TID damage, we have introduced a Double SOI structure which has a Middle Silicon layer (SOI2 layer) in addition. We studied the recovery from TID damage induced by $mathrm{^{60}Co}~gamma$s and other characteristics of an Integration-type Double SOI sensor. The Double SOI sensor irradiated to 100 kGy showed a response for IR laser similar to of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. We conclude that the Double SOI sensor is radiation hard enough to be used in HEP experiments in harsh radiation environments such as at Bell II or ILC.
We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensors responses for neutrons. Detection efficiency is measured to be a
round $1.5$% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 pm 0.2 ~mu$m in terms of a standard deviation of the line spread function.
SOI (Silicon-On-Insulator) pixel sensor is promising technology for developing the high position resolution detector by integrating the small pixels and circuits in the monolithic way. The event driven (trigger mode) SOI based pixel sensor has also b
een developed for the application of X-ray astronomy with the purpose of reducing the noise using anti-coincidence event. This trigger mode SOI pixel sensor working with in the rate of kilo Hz is also a promising scatter detector for advanced Compton imaging to track the Compton recoiled electrons.
We have developed a 4-channel multi-anode MCP-PMT, SL10, which exhibits a performance of sigma_TTS ~ 30 ps for single photons with G ~ 10^6 and QE=20% under a magnetic field of B <= 1.5 T. The cross-talk among anodes has been extensively studied. We
have taken two measures to suppress it: one is to configure the SL10 to an effectively independent 4 small pieces of MCP-PMTs by segmenting an electrode of the second MCP-layer; the other is to use a constant fractional discriminator. Remarkable improvement has been achieved.
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