اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدDetection of antiskyrmions by topological Hall effect in Heusler compounds
88
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Heusler compounds having $textit{D}$${}_{2d}$ crystal symmetry gained much attention recently due to the stabilization of a vortex-like spin texture called antiskyrmions in thin lamellae of Mn${}_{1.4}$Pt${}_{0.9}$Pd${}_{0.1}$Sn as reported in the work of Nayak $textit{et al.}$ [Nature (London) 548, 561 (2017)]. Here we show that bulk Mn${}_{1.4}$Pt${}_{0.9}$Pd${}_{0.1}$Sn undergoes a spin-reorientation transition from a collinear ferromagnetic to a noncollinear configuration of Mn moments below 135 K, which is accompanied by the emergence of a topological Hall effect. We tune the topological Hall effect in Pd and Rh substituted Mn${}_{1.4}$PtSn Heusler compounds by changing the intrinsic magnetic properties and spin textures. A unique feature of the present system is the observation of a zero-field topological Hall resistivity with a sign change which indicates the robust formation of antiskyrmions.
قيم البحث
اقرأ أيضاً
Manipulation of magnetic ground states by effective control of competing magnetic interactions has led to the finding of many exotic magnetic states. In this direction, the tetragonal Heusler compounds consisting of multiple magnetic sublattices and
crystal symmetry favoring chiral Dzyaloshinskii-Moriya interaction (DMI) provide an ideal base to realize non-trivial magnetic structures. Here, we present the observation of a large robust topological Hall effect (THE) in the multi-sublattice Mn$_{2-x}$PtIn Heusler magnets. The topological Hall resistivity, which originates from the non-vanishing real space Berry curvature in the presence of non-zero scalar spin chirality, systematically decreases with decreasing the magnitude of the canting angle of the magnetic moments at different sublattices. With help of first principle calculations, magnetic and neutron diffraction measurements, we establish that the presence of a tunable non-coplanar magnetic structure arising from the competing Heisenberg exchanges and chiral DMI from the D$_{2d}$ symmetry structure is responsible for the observed THE. The robustness of the THE with respect to the degree of non-collinearity adds up a new degree of freedom for designing THE based spintronic devices.
Effect of hydrogen adsorption on the extraordinary Hall phenomenon (EHE) in ferromagnetic CoPd films is studied as a function of composition, thickness, substrate and hydrogen concentration in atmosphere. Adsorption of hydrogen adds a positive term i
n the extraordinary Hall effect coefficient and modifies the perpendicular magnetic anisotropy with the respective changes in coercivity and remanence of hysteresis loops. Hydrogen sensitive compositions are within the Co concentration range 20% < x < 50% with the strongest response near the EHE polarity reversal point x_0 ~ 38%. Depending on the film composition and field of operation the EHE response of CoPd to low concentration hydrogen can reach hundreds percent, which makes the method and the material attractive for hydrogen sensing.
The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-
thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices.
The intrinsic orbital Hall effect (OHE), the orbital counterpart of the spin Hall effect, was predicted and studied theoretically for more than one decade, yet to be observed in experiments. Here we propose a strategy to convert the orbital current i
n OHE to the spin current via the spin-orbit coupling from the contact. Furthermore, we find that OHE can induce large nonreciprocal magnetoresistance when employing magnetic contact. Both the generated spin current and the orbital Hall magnetoresistance can be applied to probe the OHE in experiments and design orbitronic devices.
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has be
en difficult to establish in experiments. Here, we show how strong interaction between the topological surface states (TSS) with a positive g-factor and the bulk carriers can lead to a smearing of the Landau levels giving rise to an LMR behavior in a semi-metallic Heusler compound. The role of TSS is established by controllably reducing the surface-bulk coupling by a combination of substitution alloying and the application of high magnetic field, when the LMR behavior transmutes into a quantum Hall phase arising from the TSS. Our work establishes that small changes in the coupling strength between the surface and the bulk carriers can have a profound impact on the magnetotransport behavior in topological materials. In the process, we lay out a strategy to both reveal and manipulate the exotic properties of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
