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One of the key challenges to realize controlled fusion energy is tritium self-sufficiency. The application of hydrogen permeation barrier (HPB) is considered to be necessary for tritium self-sufficiency. {alpha}-Al2O3 is currently a candidate material for HPB. However, a crucial issue for {alpha}-Al2O3 is that its permeability reduction factor (PRF) will dramatically drop after ion or neutron irradiations. At present, little is known about the relevant mechanism. In order to shed light on this issue, the kinetics and energetic changes of hydrogen on defected {alpha}-Al2O3 surfaces in comparison with perfect {alpha}-Al2O3 surfaces were studied by density functional theory. For perfect {alpha}-Al2O3 surfaces, the results show that the barrier for hydrogen migration from the outermost layer into the subsurface layer is the highest, making this migration step to be a rate limiting process. In contrast, surface point defects dramatically reduce this maximum barrier. Consequently, hydrogen can preferentially permeate into the interior of the material through surface defects. The findings can help explain the possible mechanism of significant decrease of PRF under radiation.
Nanomagnets with giant magnetic anisotropy energy and long coherence time are desired for various technological innovations such as quantum information procession and storage. Based on the first-principles calculations and model analyses, we demonstr
Recent experiments on the silicon terminated $3times 2$ SiC(100) surface indicated an unexpected metallic character upon hydrogen adsorption. This effect was attributed to the bonding of hydrogen to a row of Si atoms and to the stabilization of a nei
An overview of the Conquest linear scaling density functional theory (DFT) code is given, focussing particularly on the scaling behaviour on modern high- performance computing (HPC) platforms. We demonstrate that essentially perfect linear scaling an
Density Functional Theory calculations traditionally suffer from an inherent cubic scaling with respect to the size of the system, making big calculations extremely expensive. This cubic scaling can be avoided by the use of so-called linear scaling a
Accurate computational predictions of band gaps are of practical importance to the modeling and development of semiconductor technologies, such as (opto)electronic devices and photoelectrochemical cells. Among available electronic-structure methods,