ترغب بنشر مسار تعليمي؟ اضغط هنا

Efficient calculation of the Greens function in scattering region for electron-transport simulations

263   0   0.0 ( 0 )
 نشر من قبل Yoshiyuki Egami
 تاريخ النشر 2020
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We propose a first-principles method of efficiently evaluating electron-transport properties of very long systems. Implementing the recursive Greens function method and the shifted conjugate gradient method in the transport simulator based on real-space finite-difference formalism, we can suppress the increase in the computational cost, which is generally proportional to the cube of the system length to a linear order. This enables us to perform the transport calculations of double-walled carbon nanotubes~(DWCNTs) with 196,608 atoms. We find that the conductance spectra exhibit different properties depending on the periodicity of doped impurities in DWCNTs and they differ from the properties for systems with less than 1,000 atoms.

قيم البحث

اقرأ أيضاً

In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Greens function (AGF) method to quantitatively predict the contribution of the differ ent scattering mechanisms to the thermal interface conductance of epitaxial CoSi$_2$-Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used `mixing rules to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Greens function (RGF) method with B{u}ttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that cross-interface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi$_2$-Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface.
The electronic transport behaviour of materials determines their suitability for technological applications. We develop an efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first principles in puts. The present method extends existing polar and non-polar electron-phonon coupling, ionized impurity, and piezoelectric scattering mechanisms formulated for isotropic band structures to support highly anisotropic materials. We test the formalism by calculating the electronic transport properties of 16 semiconductors and comparing the results against experimental measurements. The present work is amenable for use in high-throughput computational workflows and enables accurate screening of carrier mobilities, lifetimes, and thermoelectric power.
In this work, we propose an efficient computational scheme for first-principle quantum transport simulations to evaluate the open-boundary conditions. Its partitioning differentiates from conventional methods in that the contact self-energy matrices are constructed on smaller building blocks, principal layers (PL), while conventionally it was restricted to have the same lateral dimensions of the adjoining atoms in a channel region. Here, we obtain the properties of bulk electrodes through non-equilibrium Greens function (NEGF) approach with significant improvements in the computational efficiency without sacrificing the accuracy of results. To exemplify the merits of the proposed method we investigate the carrier density dependency of contact resistances in silicon nanowire devices connected to bulk metallic contacts.
118 - J. H. OH , D. Ahn , Y. S. Yu 2007
We investigate transport properties of gate-all-around Si nanowires using non-equilibrium Greens function technique. By taking into account of the ionized impurity scattering we calculate Greens functions self-consistently and examine the effects of ionized impurity scattering on electron densities and currents. For nano-scale Si wires, it is found that, due to the impurity scattering, the local density of state profiles loose its interference oscillations as well as is broaden and shifted. In addition, the impurity scattering gives rise to a different transconductance as functions of temperature and impurity scattering strength when compared with the transconductance without impurity scattering.
The wave-function-matching (WFM) technique for first-principles transport-property calculations was modified by So{}rensen {it et al.} so as to exclude rapidly decreasing evanescent waves [So{}rensen {it et al.}, Phys. Rev. B {bf 77}, 155301 (2008)]. However, this method lacks translational invariance of the transmission probability with respect to insertion of matching planes and consistency between the sum of the transmission and reflection probabilities and the number of channels in the transition region. We reformulate the WFM method since the original methods are formulated to include all the generalized Bloch waves. It is found that the translational invariance is destroyed by the overlap of the layers between the electrode and transition regions and by the pseudoinverses used to exclude the rapidly decreasing evanescent waves. We then devise a method that removes the overlap and calculates the transmission probability without the pseudoinverses. As a result, we find that the translational invariance of the transmission probability with respect to insertion of the extra layers is properly retained and the sum of the transmission and reflection probabilities exactly agrees with the number of channels. In addition, we prove that the accuracy in the transmission probability of this WFM technique is comparable with that obtained by the nonequilibrium Greens function method. Furthermore, we carry out the electron transport calculations on two-dimensional graphene sheets embedded with B--N line defects sandwiched between a pair of semi-infinite graphene electrodes and find the dependence of the electron transmission on the transverse momentum perpendicular to the direction of transport.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا