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NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy respecting its symmetry, we describe antiferromagnetic switching at THz frequency by a spin transfer torque mechanism. Sub-picosecond S-state switching between the six allowed stable spin directions is found for reasonably achievable spin currents, like those generated by laser induced ultrafast demagnetization. A simple procedure for picosecond writing of a six-state memory is described, thus opening the possibility to speed up current logic of electronic devices by several orders of magnitude.
We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop tran
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics ove
As electrical control of Neel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple
We use textit{ab-initio} calculations to investigate spin-orbit torques (SOTs) in FeRh(001) deposited on W(100). Since FeRh undergoes a ferromagnetic-antiferromagnetic phase transition close to room temperature, we consider both phases of FeRh. In th
Flexible control of magnetization switching by electrical manners is crucial for applications of spin-orbitronics. Besides of a switching current that is parallel to an applied field, a bias current that is normal to the switching current is introduc