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The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterers own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic impurities in low-dimensional structures, like molecular junctions and one-dimensional nanowire models, have shown that perturbative treatments cannot account for a complex energy dependence of the scattering cross section in such systems. Here we derive the exact solution of polaronic impurities shaping the electronic transport in bulk (3D) systems. In the model with a short-ranged electron-phonon interaction, we solve for and sum over all elastic and inelastic partial cross sections, abundant in resonant features. The temperature dependence of the charge mobility shows the power-law dependence, $mu(T)propto T^{- u}$, with $ u$ being highly sensitive to impurity parameters. The latter may explain nonuniversal power-law exponents observed experimentally, e.g. in high-quality organic molecular semiconductors.
Resonant elastic x-ray scattering (REXS) is an exquisite element-sensitive tool for the study of subtle charge, orbital, and spin superlattice orders driven by the valence electrons, which therefore escape detection in conventional x-ray diffraction
Twisted bilayer graphene (tBLG) has recently emerged as a platform for hosting correlated phenomena, owing to the exceptionally flat band dispersion that results near interlayer twist angle $thetaapprox1.1^circ$. At low temperature a variety of phase
Constructing an effective field theory in terms of doped magnetic impurities (described by an O(3) vector model with a random mass term), itinerant electrons of spin-orbit coupled semiconductors (given by a Dirac theory with a relatively large mass t
The thermal conductivity $kappa$ of the Kondo insulator SmB$_6$ was measured at low temperature, down to 70 mK, in magnetic fields up to 15 T, on single crystals grown using both the floating-zone and the flux methods. The residual linear term $kappa
The self-interaction corrected local spin-density approximation is used to investigate the ground-state valency configuration of transition metal (TM=Mn, Co) impurities in p-type ZnO. Based on the total energy considerations, we find a stable localis