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Motivated by the recently observed topological Hall effect in ultra-thin films of SrRuO$_3$ (SRO) grown on SrTiO$_3$ (STO) [001] substrate, we investigate the magnetic ground state and anomalous Hall response of the SRO ultra-thin films by virtue of spin density functional theory (DFT). Our findings reveal that in the monolayer limit of an SRO film, a large energy splitting of Ru-$t_{2g}$ states stabilizes an anti-ferromagnetic (AFM) insulating magnetic ground state. For the AFM ground state, our Berry curvature calculations predict a large anomalous Hall response upon doping. From the systematic symmetry analysis, we uncover that the large anomalous Hall effect arises due to a combination of broken time-reversal and crystal symmetries caused by the arrangement of non-magnetic atoms (Sr and O) in the SRO monolayer. We identify the emergent Hall effect as a clear manifestation of the so-called crystal Hall effect in terminology of v{S}mejkal et al. arXiv:1901.00445 (2019), and demonstrate that it persists at finite frequencies which is the manifestation of the crystal magneto-optical effect. Moreover, we find a colossal dependence of the AHE on the degree of crystal symmetry breaking also in ferromagnetic SRO films, which all together points to an alternative explanation of the emergence of the topological Hall effect observed in this type of systems.
Ferromagnetism and exotic topological structures in SrRuO$_3$ (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin regime. We inve
Motivated by the recently observed unconventional Hall effect in ultra-thin films of ferromagnetic SrRuO$_3$ (SRO) we investigate the effect of strain-induced oxygen octahedral distortion in the electronic structure and anomalous Hall response of the
We study the magneto-optical Kerr effect (MOKE) in SrRuO$_3$ thin films, uncovering wide regimes of wavelength, temperature, and magnetic field where the Kerr rotation is not simply proportional to the magnetization but instead displays two-component
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the s
The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using intermedi