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A central prospect of antiferromagnetic spintronics is to exploit magnetic properties that are unavailable with ferromagnets. However, this poses the challenge of accessing such properties for readout and control. To this end, light-induced manipulation of the transient ground state, e.g. by changing the magnetic anisotropy potential, opens promising pathways towards ultrafast deterministic control of antiferromagnetism. Here, we use this approach to trigger a $it{coherent}$ rotation of the entire long-range antiferromagnetic spin arrangement about a crystalline axis in $GdRh_2Si_2$ and demonstrate $it{deterministic}$ control of this rotation upon ultrafast optical excitation. Our observations can be explained by a displacive excitation of the Gd spins$$ local anisotropy potential by the optical excitation, allowing for a full description of this transient magnetic anisotropy potential.
We report magnetic susceptibility, specific heat, and Raman scattering investigations of alpha-TeVO4 containing V-O edge-sharing chains. These chains promote a system of ferromagnetic/antiferromagnetic spin-1/2 Heisenberg alternating exchange chains
Using a time-resolved optically-pumped scanning optical microscopy technique we demonstrate the laser-driven excitation and propagation of spin waves in a 20-nm film of a ferromagnetic metallic alloy Galfenol epitaxially grown on a GaAs substrate. In
Recently, the switching between the different charge-ordered phases of 1T-TaS2 has been probed by ultrafast techniques, revealing unexpected phenomena such as hidden metastable states and peculiar photoexcited charge patterns. Here, we apply broadban
Femtosecond time-resolved x-ray diffraction is employed to study the dynamics of the periodic lattice distortion (PLD) associated with the charge-density-wave (CDW) in K0.3MoO3. Using a multi-pulse scheme we show the ability to extend the lifetime of
We present a first comprehensive study on deterministic spin preparation employing excited state resonances of droplet etched GaAs quantum dots. This achievement facilitates future investigations of spin qubit based quantum memories using the GaAs qu