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We demonstrate strong suppression of charge dispersion in a semiconductor-based transmon qubit across Josephson resonances associated with a quantum dot in the junction. On resonance, dispersion is drastically reduced compared to conventional transmons with corresponding Josephson and charging energies. We develop a model of qubit dispersion for a single-channel resonance, which is in quantitative agreement with experimental data.
We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the $I(V)$ characteristics measured at 30mK, the contribution of individual donors is resolved and the fin
Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has bee
We performed quantum manipulations of the multi-level spin system S=5/2 of a Mn$^{2+}$ ion, by means of a two-tone pulse drive. The detuning between the excitation and readout radio frequency pulses allows one to select the number of photons involved
Several models of thermionic energy nanoconverters have been proposed to study the transport phenomena that take place in electronic devices. For example, in resonant tunneling junctions those phenomena are manifested through the thermoelectric effec
Macroscopic resonant tunneling between the two lowest lying states of a bistable RF-SQUID is used to characterize noise in a flux qubit. Measurements of the incoherent decay rate as a function of flux bias revealed a Gaussian shaped profile that is n