ﻻ يوجد ملخص باللغة العربية
Devices made from two dimensional materials such as graphene and transition metal dichalcogenides exhibit remarkable electronic properties of interest to many subdisciplines of nanoscience. Owing to their 2D nature, their quality is highly susceptible to contamination and degradation when exposed to the ambient environment. Protecting the 2D layers by encapsulation between hexagonal boron nitride layers significantly improves their quality. Locating these samples within the encapsulant and assessing their integrity prior to further processing then becomes challenging. Here we show that conductive scanning probe techniques such as electrostatic force and Kelvin force microscopy makes it possible to visualize the encapsulated layers, their charge environment and local defects including cracks and bubbles on the sub-micrometer scale. Our techniques are employed without requiring electrical contact to the embedded layer, providing valuable feedback on the local electronic quality prior to any device etching or electrode deposition. We show that these measurement modes, which are simple extensions of atomic force microscopy, are perfectly suited for imaging encapsulated conductors and their local charge environments.
The flow of charge carriers in materials can, under some circumstances, mimic the flow of viscous fluids. In order to visualize the consequences of such effects, new methodologies must be developed that can probe the quasiparticle flow profile with n
Devices made from two-dimensional (2D) materials such as graphene or transition metal dichalcogenides possess interesting electronic properties that can become accessible to experimental probes when the samples are protected from deleterious environm
We report a proof-of-concept study of extraordinary magnetoresistance (EMR) in devices of monolayer graphene encapsulated in hexagonal boron nitride, having metallic edge contacts and a central metal shunt. Extremely large EMR values, $MR=(R(B) - R_0
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -
A scalable tight-binding model is applied for large-scale quantum transport calculations in clean graphene subject to electrostatic superlattice potentials, including two types of graphene superlattices: moire patterns due to the stacking of graphene