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تسجيل مستخدم جديدSpin and Magnetism in 2D Materials
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Roland K. Kawakami
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We review recent progress on spins and magnetism in 2D materials including graphene, transition metal dichalcogenides, and 2D magnets. We also discuss challenges and prospects for the future of spintronics with 2D van der Waals heterostructures.
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The high mechanical strength and excellent flexibility of 2D materials such as graphene are some of their most important properties [1]. Good flexibility is key for exploiting 2D materials in many emerging technologies, such as wearable electronics,
bioelectronics, protective coatings and composites [1] and recently bending has been suggested as a route to tune electronic transport behaviour [2]. For virtually all crystalline materials macroscopic deformation is accommodated by the movement of dislocations and through the formation of twinning defects [3]; it is the geometry of the resulting microstructure that largely determines the mechanical and electronic properties. Despite this, the atomic microstructure of 2D materials after mechanical deformation has not been widely investigated: only by understanding these deformed microstructures can the resulting properties be accurately predicted and controlled. In this paper we describe the different structural features that can form as a result of bending in van der Waals (vdW) crystals of 2D materials. We show that twin boundaries, an important class of crystal defect, are delocalised by several nm and not atomically sharp as has been assumed for over half a century [4]. In addition, we demonstrate that different classes of microstructure are present in the deformed material and can be predicted from just the atomic structure, bend angle, and flake thickness. We anticipate that this new knowledge of the deformation structure for 2D materials will provide foundations for tailoring transport behaviour[2], mechanical properties, liquid-phase [5,6] and scotch-tape exfoliation [7,8], and crystal growth.
The recent discovery of ferromagnetism in 2D van der Waals (vdw) crystals has generated widespread interest, owing to their potential for fundamental and applied research. Advancing the understanding and applications of vdw magnets requires methods t
o quantitatively probe their magnetic properties on the nanoscale. Here, we report the study of atomically thin crystals of the vdw magnet CrI$_3$ down to individual monolayers using scanning single-spin magnetometry, and demonstrate quantitative, nanoscale imaging of magnetisation, localised defects and magnetic domains. We determine the magnetisation of CrI$_3$ monolayers to be $approx16~mu_B/$nm$^2$ and find comparable values in samples with odd numbers of layers, whereas the magnetisation vanishes when the number of layers is even. We also establish that this inscrutable even-odd effect is intimately connected to the material structure, and that structural modifications can induce switching between ferro- and anti-ferromagnetic interlayer ordering. Besides revealing new aspects of magnetism in atomically thin CrI$_3$ crystals, these results demonstrate the power of single-spin scanning magnetometry for the study of magnetism in 2D vdw magnets.
The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple
optical technique to read unique information from nanometer-scale defects in 2D materials. Flaws created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angle-adjustable transmission filter, simple optics and a CCD camera can capture spatially-dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting.
Low-symmetry 2D materials---such as ReS$_2$ and ReSe$_2$ monolayers, black phosphorus monolayers, group-IV monochalcogenide monolayers, borophene, among others---have more complex atomistic structures than the honeycomb lattices of graphene, hexagona
l boron nitride, and transition metal dichalcogenides. The reduced symmetries of these emerging materials give rise to inhomogeneous electron, optical, valley, and spin responses, as well as entirely new properties such as ferroelasticity, ferroelectricity, magnetism, spin-wave phenomena, large nonlinear optical properties, photogalvanic effects, and superconductivity. Novel electronic topological properties, nonlinear elastic properties, and structural phase transformations can also take place due to low symmetry. The Beyond Graphene: Low-Symmetry and Anisotropic 2D Materials Special Topic was assembled to highlight recent experimental and theoretical research on these emerging materials.
Collective modes of doped two-dimensional crystalline materials, namely graphene, MoS$_2$ and phosphorene, both monolayer and bilayer structures, are explored using the density functional theory simulations together with the random phase approximatio
n. The many-body dielectric functions of the materials are calculated using an {it ab initio} based model involving material-realistic physical properties. Having calculated the electron energy-loss, we calculate the collective modes of each material considering the in-phase and out-of-phase modes for bilayer structures. Furthermore, owing to many band structures and intreband transitions, we also find high-energy excitations in the systems. We explain that the material-specific dielectric function considering the polarizability of the crystalline material such as MoS$_2$ are needed to obtain realistic plasmon dispersions. For each material studied here, we find different collective modes and describe their physical origins.
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