ترغب بنشر مسار تعليمي؟ اضغط هنا

Nodeless superconducting gap in the candidate topological superconductor Sn$_{1-x}$In$_x$Te for x = 0.7

108   0   0.0 ( 0 )
 نشر من قبل Matthew Smylie
 تاريخ النشر 2019
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

High-pressure synthesis techniques have allowed for the growth of Sn$_{1-x}$In$_x$Te samples beyond the ambient In-saturation limit of $x$ = 0.5 (T$_c sim$ 4.5 K). In this study, we present measurements of the temperature dependence of the London penetration depth $Deltalambda(T)$ in this superconducting doped topological insulator for $x$ = 0.7, where T$_{c,onset}approx 5$ K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity $A_{2u}$ pairing; however, odd-parity $A_{1u}$ pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.

قيم البحث

اقرأ أيضاً

We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x$ = 0.66) into Sn site in a single phase of Sn$_{1-x}$In$_x$Te beyond the bulk solubility limit at ambient pressure ($x$ = 0.5). $T_mathrm{c}$ shows a dome-shaped dependence on In content $x$ with the highest $T_mathrm{c}$ = 4.20 K at $x$ = 0.55, being consistent to that reported for bulk crystals. The well-regulated Sn$_{1-x}$In$_x$Te films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.
The temperature dependence of the London penetration depth $Deltalambda(T)$ in the superconducting doped topological crystalline insulator Sn$_{1-x}$In$_x$Te was measured down to 450 mK for two different doping levels, x $approx$ 0.45 (optimally dope d) and x $approx$ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance $T_c$, indicating that ferroelectric interactions do not compete with superconductivity.
189 - S. Y. Zhou , X. C. Hong , X. Qiu 2012
The thermal conductivity of optimally doped NaFe$_{0.972}$Co$_{0.028}$As ($T_c sim$ 20 K) and overdoped NaFe$_{0.925}$Co$_{0.075}$As ($T_c sim$ 11 K) single crystals were measured down to 50 mK. No residual linear term $kappa_0/T$ is found in zero ma gnetic field for both compounds, which is an evidence for nodeless superconducting gap. Applying field up to $H$ = 9 T ($approx H_{c2}/4$) does not noticeably increase $kappa_0/T$ in NaFe$_{1.972}$Co$_{0.028}$As, which is consistent with multiple isotropic gaps with similar magnitudes. The $kappa_0/T$ of overdoped NaFe$_{1.925}$Co$_{0.075}$As shows a relatively faster field dependence, indicating the increase of the ratio between the magnitudes of different gaps, or the enhancement of gap anisotropy upon increasing doping.
Indium-doped SnTe has been of interest because the system can exhibit both topological surface states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic stat es induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn$_{1-x}$In$_x$Te single crystals with $0.1le x le 0.45$. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at $xsim0.25$; one would expect electron-like carriers if the In ions have a valence of $+3$. For single crystals with $x = 0.45$, corresponding to the highest superconducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we find evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.
554 - S. Y. Zhou , X. L. Li , B. Y. Pan 2012
The thermal conductivity $kappa$ of superconductor Ir$_{1-x}$Pt$_{x}$Te$_2$ ($x$ = 0.05) single crystal with strong spin-orbital coupling was measured down to 50 mK. The residual linear term $kappa_0/T$ is negligible in zero magnetic field. In low ma gnetic field, $kappa_0/T$ shows a slow field dependence. These results demonstrate that the superconducting gap of Ir$_{1-x}$Pt$_{x}$Te$_2$ is nodeless, and the pairing symmetry is likely conventional s-wave, despite the existence of strong spin-orbital coupling and a quantum critical point.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا