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High-pressure synthesis techniques have allowed for the growth of Sn$_{1-x}$In$_x$Te samples beyond the ambient In-saturation limit of $x$ = 0.5 (T$_c sim$ 4.5 K). In this study, we present measurements of the temperature dependence of the London penetration depth $Deltalambda(T)$ in this superconducting doped topological insulator for $x$ = 0.7, where T$_{c,onset}approx 5$ K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity $A_{2u}$ pairing; however, odd-parity $A_{1u}$ pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.
We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te enables us
The temperature dependence of the London penetration depth $Deltalambda(T)$ in the superconducting doped topological crystalline insulator Sn$_{1-x}$In$_x$Te was measured down to 450 mK for two different doping levels, x $approx$ 0.45 (optimally dope
The thermal conductivity of optimally doped NaFe$_{0.972}$Co$_{0.028}$As ($T_c sim$ 20 K) and overdoped NaFe$_{0.925}$Co$_{0.075}$As ($T_c sim$ 11 K) single crystals were measured down to 50 mK. No residual linear term $kappa_0/T$ is found in zero ma
Indium-doped SnTe has been of interest because the system can exhibit both topological surface states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic stat
The thermal conductivity $kappa$ of superconductor Ir$_{1-x}$Pt$_{x}$Te$_2$ ($x$ = 0.05) single crystal with strong spin-orbital coupling was measured down to 50 mK. The residual linear term $kappa_0/T$ is negligible in zero magnetic field. In low ma