ﻻ يوجد ملخص باللغة العربية
The recently discovered negatively charged tin-vacancy centre in diamond is a promising candidate for applications in quantum information processing (QIP). We here present a detailed spectroscopic study encompassing single photon emission and polarisation properties, the temperature dependence of emission spectra as well as a detailed analysis of the phonon sideband and Debye-Waller factor. Using photoluminescence excitation spectroscopy (PLE) we probe an energetically higher lying excited state and prove fully lifetime limited linewidths of single emitters at cryogenic temperatures. For these emitters we also investigate the stability of the charge state under resonant excitation. These results provide a detailed insight into the spectroscopic properties of the $text{SnV}^-$ centre and lay the foundation for further studies regarding its suitability in QIP.
Negatively charged nitrogen-vacancy centres in diamond are promising quantum magnetic field sensors. Laser threshold magnetometry has been a theoretical approach for the improvement of NV-centre ensemble sensitivity via increased signal strength and
Stimulated emission is the process fundamental to laser operation, thereby producing coherent photon output. Despite negatively-charged nitrogen-vacancy (NV$^-$) centres being discussed as a potential laser medium since the 1980s, there have been no
We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in
Group-IV color centers in diamond are a promising light-matter interface for quantum networking devices. The negatively charged tin-vacancy center (SnV) is particularly interesting, as its large spin-orbit coupling offers strong protection against ph
Deep defects in wide band gap semiconductors have emerged as leading qubit candidates for realizing quantum sensing and information applications. Due to the spatial localization of the defect states, these deep defects can be considered as artificial