اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدInfluence of nanostructuring on silicon vacancy center spins in diamond pillars
80
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Color centers in diamond micro and nano structures are under investigation for a plethora of applications. However, obtaining high quality color centers in small structures is challenging, and little is known about how properties such as spin population lifetimes change during the transition from bulk to micro and nano structures. In this manuscript, we studied various ways to prepare diamond samples containing silicon vacancy centers and measured how population lifetimes of orbital states change in pillars as we varied their dimensions from approximately 1 $mu$m to 120 nm. We also researched the influence of the properties of the diamond substrate and the implantation and annealing methods on the silicon vacancy inhomogeneous linewidth and orbital lifetime. Our measurements show that nominally identical diamond samples can display significantly distinct inhomogeneous broadening. We observed weak indications that restricted vibrational modes in small structures may extend population lifetimes. However, imperfections in the crystal lattice or surface damage caused by etching reduce population lifetimes, especially in the smallest structures.
قيم البحث
اقرأ أيضاً
We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition fr
equencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant
excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~mathrm{mu s}$ at low-temperature, and a spin relaxation limit of $T_1>25~mathrm{s}$. Optical spin state initialization around 946 nm allows independent initialization of $mathrm{SiV^{0}}$ and $mathrm{NV^{-}}$ within the same optically-addressed volume, and $mathrm{SiV^{0}}$ emits within the telecoms downconversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that $mathrm{SiV^{0}}$ is a promising candidate for a long-range quantum communication technology.
A solid-state system combining a stable spin degree of freedom with an efficient optical interface is highly desirable as an element for integrated quantum optical and quantum information systems. We demonstrate a bright color center in diamond with
excellent optical properties and controllable electronic spin states. Specifically, we carry out detailed optical spectroscopy of a Germanium Vacancy (GeV) color center demonstrating optical spectral stability. Using an external magnetic field to lift the electronic spin degeneracy, we explore the spin degree of freedom as a controllable qubit. Spin polarization is achieved using optical pumping, and a spin relaxation time in excess of 20 $mu$s is demonstrated. Optically detected magnetic resonance (ODMR) is observed in the presence of a resonant microwave field. ODMR is used as a probe to measure the Autler-Townes effect in a microwave-optical double resonance experiment. Superposition spin states were prepared using coherent population trapping, and a pure dephasing time of about 19 ns was observed. Prospects for realizing coherent quantum registers based on optically controlled GeV centers are discussed.
We theoretically propose a method to realize optical nonreciprocity in rotating nano-diamond with a nitrogen-vacancy (NV) center. Because of the relative motion of the NV center with respect to the propagating fields, the frequencies of the fields ar
e shifted due to the Doppler effect. When the control and probe fields are incident to the NV center from the same direction, the two-photon resonance still holds as the Doppler shifts of the two fields are the same. Thus, due to the electromagnetically-induced transparency (EIT), the probe light can pass through the NV center nearly without absorption. However, when the two fields propagate in opposite directions, the probe light can not effectively pass through the NV center as a result of the breakdown of two-photon resonance.
The diamond nitrogen-vacancy (NV) center is a leading platform for quantum information science due to its optical addressability and room-temperature spin coherence. However, measurements of the NV centers spin state typically require averaging over
many cycles to overcome noise. Here, we review several approaches to improve the readout performance and highlight future avenues of research that could enable single-shot electron-spin readout at room temperature.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
