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We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant
Color centers in diamond micro and nano structures are under investigation for a plethora of applications. However, obtaining high quality color centers in small structures is challenging, and little is known about how properties such as spin populat
The diamond nitrogen-vacancy (NV) center is a leading platform for quantum information science due to its optical addressability and room-temperature spin coherence. However, measurements of the NV centers spin state typically require averaging over
Applications of negatively charged nitrogen-vacancy center in diamond exploit the centers unique optical and spin properties, which at ambient temperature, are predominately governed by electron-phonon interactions. Here, we investigate these interac
We theoretically propose a method to realize optical nonreciprocity in rotating nano-diamond with a nitrogen-vacancy (NV) center. Because of the relative motion of the NV center with respect to the propagating fields, the frequencies of the fields ar