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The electronic interconnections in the state-of-the-art integrated circuit manufacturing have been scaled down to the micron or sub-micron scale. This results in a dramatic increase in the current density passing through interconnections, which means that the electromigration (EM) effect plays a significant role in the reliability of products. Although thorough studies and reviews of EM effects have been continuously conducted in the past 60 years, some parts of EM theories lack clear elucidation of the electric current-induced non-directional effects, including electric current-induced phase equilibrium changes. This review article is intended to provide a broad picture of electric current-induced lattice stability changes and to summarize the existing literature on EM-related phenomena, EM-related theoretical models, and relevant effects of the electroplastic (EP) effect in order to lead to a better understanding of electric current-induced effects on materials. This article also posits that EM is either part of the EP effect or shares the intrinsic electric current-induced plastic deformation associated with the EP effect. This concept appears to contribute to the missing parts of the EM theories.
Films of all-important compound hafnia (HfO2) can be prepared in an orthorhombic ferroelectric (FE) state that is ideal for applications, e.g. in memories or negative-capacitance field-effect transistors. The origin of this FE state remains a mystery
MacDonald and co-workers recently predicted that high current densities could affect the magnetic order of antiferromagnetic (AFM) multilayers, in ways similar to those that occur in ferromagnetic (F) multilayers, and that changes in AFM magnetic ord
Atom probe tomography (APT), electron probe microanalysis (EPMA) and nanoindentation were used to characterise the oxygen-rich layer on an in-service jet engine compressor disc, manufactured from the titanium alloy TIMETAL 834. Oxygen ingress was qua
Bias stress degradation in conjugated polymer field-effect transistors is a fundamental problem in these disordered materials and can be traced back to interactions of the material with environmental species,1,2,3 as well as fabrication-induced defec
The discovery of ferroelectric polarization in HfO2-based ultrathin films has spawned a lot of interest due to their potential applications in data storage. Recently, a new R3m rhombohedral phase was proposed to be responsible for the emergence of fe