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To elucidate the physics underling magnetism observed in nominally nonmagnetic materials with only $sp$-electrons, we built an extreme model to simulate H-adsorption (in a straight-line form) on graphene. Our first principles calculations for the model produce a ferromagnetic ground state with a magnetic moment of one Bohr magneton per H atom and an estimated Curie temperature above 250~K. The removal of the $p_z$-orbitals from sublattice B of graphene introduces $p_z$-vacancies. The $p_z$-vacancy-induced states are not created from changes in interatomic interactions but are created because of a $p_z$-orbital imbalance between two sublattices (A and B) of a conjugated $p_z$-orbital network. Therefore, there are critical requirements for the creation of these states (denoted as $p_z^{rm imbalance}$) to avoid further imbalances and minimize the effects on the conjugated $p_z$-orbital network. The requirements on the creation of $p_z^{rm imbalance}$ are as follows: 1) $p_z^{rm imbalance}$ consists of $p_z$-orbitals of only the atoms in sublattice A, 2) the spatial wavefunction of $p_z^{rm imbalance}$ is antisymmetric, and 3) in principle, $p_z^{rm imbalance}$ extends over the entire crystal without decaying, unless other $p_z$-vacancies are crossed. Both the origin of spin polarization and the magnetic ordering of the model arise from the aforementioned requirements.
Defect is no longer deemed an adverse aspect of graphene. Contrarily, it can pave ways of extending applicability of graphene. Here, we discuss the effects of three types of defects on graphene: carbon deficiency, adatom (single Fe) dopant and introd
Two-dimensional (2D) ferromagnetic (FM) semiconductors with high Curie temperature have long been pursued for electronic and spintronic applications. Here we provide a general strategy to achieve robust FM state in bilayer CrI3 of the monoclinic stac
The adsorption energies and orientation of methanol on graphene are determined from first-principles density functional calculations. We employ the well-tested vdW-DF method that seamlessly includes dispersion interactions with all of the more close-
We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest Tc values for growth temperatures very close to the
We perform first-principles structure optimization, phonon frequency and finite temperature molecular dynamics calculations based on density functional theory to study the interaction of chlorine atoms with graphene predicting the existence of possib